Electronics and optoelectronics of quasi-1D layered transition metal trichalcogenides

Abstract

The isolation of graphene and transition metal dichalcongenides has opened a veritable world to a great number of layered materials which can be exfoliated, manipulated, and stacked or combined at will. With continued explorations expanding to include other layered materials with unique attributes, it is becoming clear that no one material will fill all the post-silicon era requirements. Here we review the properties and applications of layered, quasi-one dimensional transition metal trichalcogenides (TMTCs) as novel materials for next generation electronics and optoelectronics. The TMTCs present a unique chain-like structure which gives the materials their quasi-one dimensional properties such as high anisotropy ratios in conductivity and linear dichroism. The range of band gaps spanned by this class of materials (0.2 eV-2 eV) makes them suitable for a wide variety of applications including field-effect transistors, infrared, visible and ultraviolet photodetectors, and unique applications related to their anisotropic properties which opens another degree of freedom in the development of next generation electronics. In this review we survey the historical development of these remarkable materials with an emphasis on the recent activity generated by the isolation and characterization of atomically thin titanium trisulfide (TiS3).

Ab initio and semiempirical modeling of excitons and trions in monolayer TiS3

“…As expected, the DFT gap is much smaller than the experimental electronic band gap and the optical band gap of TiS 3 , which are reported to be around 1.2 and 1.1 eV, respectively [23][24][25]. Earlier calculations with the HSE06 hybrid functional reported the electronic band gap of monolayer TiS 3 as 1.05 eV [40], and GW calculations using the plasmon-pole approximation yielded around 1.15 eV [42,43]. It is important to mention that the inclusion of the Cc changes the converged electronic gap of pristine single-layer TiS 3 .…”

Vibration uncoupling of germanium with different valence states lowers thermal conductivity of Cs2Ge3Ga6Se14

“…Thus, the understanding of phonon thermal transport has become a key issue in materials science for engineering efficient materials towards applications. Chalcogenides, as promising functional materials with abundant compositions, crystal structures and property diversities, have shown the im-pressive potential applications, such as optoelectronics [2], transistors [3], and thermoelectrics [4]. In particular, the correlation between thermal property and the structure has been widely reported.…”

Monoclinic structures of niobium trisulfide

“…Much like MX 2 materials, MX 3 materials are amenable to mechanical or chemical exfoliation along the van der Waals gap, 6,14 and recent studies show that their properties can be maintained or even enhanced by nanostructuring. 12,15 Here we consider NbS 3 , arguably the least-well-understand metal trichalcogenide. The niobiumsulfur system contains a rich cornucopia of phases, including an unknown number of NbS 3 polymorphs, varying compositions from NbS to Nb 21 S 8 , and the possibility of non-stoichiometric phases.…”