2018
DOI: 10.1103/physrevb.98.075419
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Ab initio and semiempirical modeling of excitons and trions in monolayer TiS3

Abstract: We explore the electronic and the optical properties of monolayer TiS 3 , which shows in-plane anisotropy and is composed of a chain-like structure along one of the lattice directions. Together with its robust direct band gap, which changes very slightly with stacking order and with the thickness of the sample, the anisotropic physical properties of TiS 3 make the material very attractive for various device applications. In this study, we present a detailed investigation on the effect of the crystal anisotropy… Show more

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Cited by 16 publications
(18 citation statements)
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“…For TiS 3 we find that the negative trion binding energy is larger than the positive trion binding energy, whereas the opposite behavior was found in Ref. [39]. There are only few experimental works studying excitonic systems in monolayer bP.…”
Section: Resultscontrasting
confidence: 48%
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“…For TiS 3 we find that the negative trion binding energy is larger than the positive trion binding energy, whereas the opposite behavior was found in Ref. [39]. There are only few experimental works studying excitonic systems in monolayer bP.…”
Section: Resultscontrasting
confidence: 48%
“…We see that the binding energy for identical electron and hole masses is always larger than that for opposite masses except when the masses in the k x -and k y -direction are equal, i.e. at m x e = 0.1m 0 , m x e = m 0 , and m x e = 4m 0 for the blue, red, and black curves, respectively, as in this case the two situations [39] are identical. This can be explained by the fact that the reduced mass µ x(y) = m ), implying that in the opposite mass case µ x = µ y will remain small when m x e = m y h becomes large.…”
Section: Resultsmentioning
confidence: 79%
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“…The physical parameters of PbS and TiS 3 layers used in this simulation are shown in Table 1. All these parameters are from previous reports and theories [12,[41][42][43]. The approximate thermal velocity of electrons and holes in PbS and TiS 3 semiconductor at room temperature is set at 10 7 cm/s for simplifying the numerical calculation.…”
Section: Numerical Simulation and Device Structurementioning
confidence: 99%
“…It has a direct gap around 1 eV with high carrier mobility and may find applications in future nanoelectronics, thermoelectric device and infrared light emission [17][18][19] . Due to the two-dimensional nature, the screening of electronhole interaction is significantly reduced in monolayer TiS 3 , leading to a large exciton binding energy 12,[20][21][22][23] . Even more interesting is that its band edge states have the same parity and thus transitions between them are dipole forbidden which further suppresses the screening effect.…”
Section: Introductionmentioning
confidence: 99%