We investigated thermal properties of the epoxy-based composites with a high loading fractionup to ≈ 45 vol. % -of the randomly oriented electrically conductive graphene fillers and electrically insulating boron nitride fillers. It was found that both types of the composites revealed a distinctive thermal percolation threshold at the loading fraction > 20 vol. %. The graphene loading required for achieving the thermal percolation, , was substantially higher than the loading, , for the electrical percolation. Graphene fillers outperformed boron nitride fillers in the thermal conductivity enhancement. It was established that thermal transport in composites with the high filler loading, ≥ , is dominated by heat conduction via the network of percolating fillers. Unexpectedly, we determined that the thermal transport properties of the high loading composites were influenced strongly by the cross-plane thermal conductivity of the quasi-twodimensional fillers. The obtained results shed light on the debated mechanism of the thermal × Contributed equally to the work. * Corresponding author (A.A.B.): balandin@ece.ucr.edu ; web-site: http://balandingroup.ucr.edu/ Thermal Percolation Threshold and Thermal Properties of Composites with Graphene and Boron Nitride Fillers, UCR (2018) 2 | P a g e percolation, and facilitate the development of the next generation of the efficient thermal interface materials for electronic applications. Main TextThe discovery of unique heat conduction properties of graphene 1-7 motivated numerous practically oriented studies of the use of graphene and few-layer graphene (FLG) in various composites, thermal interface materials and coatings [8][9][10][11][12][13][14][15] . The intrinsic thermal conductivity of large graphene layers exceeds that of the high-quality bulk graphite, which by itself is very high -2000 Wm −1 K −1 at room temperature (RT) 1,11,16,17 . The first studies of graphene composites found that even a small loading fractions of randomly oriented graphene fillers -up to = 10 vol. %can increase the thermal conductivity of epoxy composites by up to a factor of ×25 [Ref. 11]. These results have been independently confirmed by different research groups 18,19 . The variations in the reported thermal data for graphene composites can be explained by the differences in the methods of preparation, matrix materials, quality of graphene, lateral sizes and thickness of graphene fillers and other factors 3,20-25 . Most of the studies of thermal composites with graphene were limited to the relatively low loading fractions, ≤ 10 vol. %. The latter was due to difficulties in preparation of high-loading fraction composites with a uniform dispersion of graphene flakes. The changes in viscosity and graphene flake agglomeration complicated synthesis of the consistent set of samples with the loading substantially above = 10 vol. %.Investigation of thermal properties of composites with the high loading fraction of graphene or FLG fillers is interesting from both fundamental science and practical applicat...

We report on the current-carrying capacity of the nanowires made from the quasi-1D van der Waals metal tantalum triselenide capped with quasi-2D boron nitride. The chemical vapor transport method followed by chemical and mechanical exfoliation were used to fabricate the mm-long TaSe3 wires with the lateral dimensions in the 20 to 70 nm range. Electrical measurements establish that the TaSe3/h-BN nanowire heterostructures have a breakdown current density exceeding 10 MA cm(-2)-an order-of-magnitude higher than that for copper. Some devices exhibited an intriguing step-like breakdown, which can be explained by the atomic thread bundle structure of the nanowires. The quasi-1D single crystal nature of TaSe3 results in a low surface roughness and in the absence of the grain boundaries. These features can potentially enable the downscaling of the nanowires to lateral dimensions in a few-nm range. Our results suggest that quasi-1D van der Waals metals have potential for applications in the ultimately downscaled local interconnects.

We report the results of ultraviolet Raman spectroscopy of NiO, which allowed us to determine the spin-phonon coupling coefficients in this important antiferromagnetic material. The use of the second-order phonon scattering and ultraviolet laser excitation (k ¼ 325 nm) was essential for overcoming the problem of the optical selection rules and dominance of the two-magnon band in the visible Raman spectrum of NiO. We established that the spins of Ni atoms interact more strongly with the longitudinal than transverse optical phonons and produce opposite effects on the phonon energies. The peculiarities of the spin-phonon coupling are consistent with the trends given by density functional theory. The obtained results shed light on the nature of the spin-phonon coupling in antiferromagnetic insulators and can help in developing spintronic devices.

We discuss the synthesis and properties of plasmonic zirconium nitride nanocrystals produced using a nonthermal plasma reactor. The process enables the continuous conversion of chemical precursors into free-standing ∼10 nm diameter nanoparticles. Oxidation limits the resonant plasmon energy from ∼2.6 eV for ideal unoxidized particles to ∼2.1 eV for particles exposed to air at room temperature. A simple modification to the plasma process allows the inflight growth of a conformal silicon oxynitride shell onto the zirconium nitride core. The shell inhibits the oxidation of the core, resulting in particles with a plasmon energy of 2.35 eV. These particles show good plasmonic behavior even after annealing in air at 300 °C, largely improved when compared to unprotected particles that oxidize and lose plasmonic activity at the same temperature. This work represents a step toward the development of earth-abundant, thermally and chemically resistant nanoparticles that can offer an inexpensive alternative to gold and silver and extended applicability in harsh environments.

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Two new polymorphs of niobium trisulfide are established by single crystal x-ray diffraction. NbS3-iv crystallizes in the monoclinic space group P21/c with lattice parameters a = 6.7515(5) Å, b = 4.9736(4) Å, c = 18.1315(13) Å, and β = 90.116(2)°. Its structure is based on chains of [NbS6] trigonal prisms containing Nb–Nb pairs with a bond length of 3.0448(8) Å; this pairing causes the chains to corrugate slightly along their axis, a feature also present in triclinic NbS3-i that leads to semiconductor properties. The stacking arrangement of chains is different in these polymorphs, however, with NbS3-i having an ABCDE repeating sequence of chain bilayers and NbS3-iv having an AB repeating sequence. HRTEM studies show the presence of topotactically-oriented intergrown zones and numerous dislocations, which result in mosaic structuring. A second new polymorph, NbS3-v, crystallizes in the monoclinic space group P21/m with lattice parameters a = 4.950(5) Å, b = 3.358(4) Å, c = 9.079(10) Å, β = 97.35(2)°. In contrast to NbS3-iv, NbS3-v maintains fixed a Nb–Nb bond distance of 3.358(4) Å along the chains, and it has an ABCDE repeating sequence of chain bilayers similar to NbS3-i. High resolution scanning transmission electron microscopy (HR-STEM) imaging of an exfoliated NbS3-v nanoribbon shows the continuous [NbS6] chains oriented along the b-axis. These results provide the first firmly established structural data for monoclinic NbS3. In addition, SEM images show the formation of NbS3 rings and cylinders, and a combination of powder x-ray diffraction and Raman spectroscopy provides a way to distinguish between NbS3 polymorphs.

We report results of an investigation of the temperature dependence of the magnon and phonon frequencies in NiO. A combination of Brillouin-Mandelstam and Raman spectroscopies allowed us to elucidate the evolution of the phonon and magnon spectral signatures from the Brillouin zone center (GHz range) to the second-order peaks from the zone boundary (THz range). The temperature-dependent behavior of the magnon and phonon bands in the NiO spectrum indicates the presence of antiferromagnetic (AF) order fluctuation or a persistent AF state at temperatures above the Néel temperature (T N =523 K). Tuning the intensity of the excitation laser provides a method for disentangling the features of magnons from acoustic phonons without the application of a magnetic field. Our results are useful for interpretation of the inelastic-light scattering spectrum of NiO, and add to the knowledge of its magnon properties important for THz spintronic devices.

Proton radiation damage is an important failure mechanism for electronic devices in near-Earth orbits, deep space and high energy physics facilities [1][2][3][4] . Protons can cause ionizing damage and atomic displacements, resulting in device degradation and malfunction [5][6][7][8][9][10] . Shielding of electronics increases the weight and cost of the systems but does not eliminate destructive single events produced by energetic protons 8,10 . Modern electronics based on semiconductors -even those specially designed for radiation hardness -remain highly susceptible to proton damage. Here we demonstrate that room temperature (RT) charge-density-wave (CDW) devices with quasi-two-dimensional (2D) 1T-TaS2 channels show remarkable immunity to bombardment with 1.8 MeV protons to a fluence of at least 10 14 H + cm -2 . Current-2 | P a g e voltage I-V characteristics of these 2D CDW devices do not change as a result of proton irradiation, in striking contrast to most conventional semiconductor devices or other 2D devices. Only negligible changes are found in the low-frequency noise spectra. The radiation immunity of these "all-metallic" CDW devices can be attributed to their two-terminal design, quasi-2D nature of the active channel, and high concentration of charge carriers in the utilized CDW phases. Such devices, capable of operating over a wide temperature range, can constitute a crucial segment of future electronics for space, particle accelerator and other radiation environments. | P a g eThe future of human and unmanned space exploration depends crucially on the development of new electronic technologies that are immune to space radiation, which consists primarily of protons, electrons, and cosmic rays 1-4 . The penetrating energetic radiation of deep space produces negative impacts on not only biological entities but also the electronic systems of space vehicles. Electronics capable of operating in highradiation environments are also needed for monitoring nuclear materials, medical diagnostics, radiation treatments, nuclear reactors and particle accelerators 5-12 .Shielding of electronic systems in space is limited to lower-energy electrons and protons.High-energy proton irradiation causes ionizing damage by generating excess charges at the interface regions in the complementary metal-oxide-semiconductor (CMOS) transistors and other typical microelectronic devices and integrated circuits [8][9][10][11][12][13][14] . This type of damage results in the changes in the threshold voltages and source-drain currents, potentially leading to device or system failure. Protons also can induce displacement, which typically leads to the formation of point defects in semiconductors. These are electronic trapping states that often reveal themselves by increases in low-frequency noise (LFN) 15,16 Noise increases beyond system tolerance limits is therefore an additional challenge to electronics in high-radiation environments. Shielding, the use of conventional radiation-hardened technologies and backup devices, increases system...