Low-noise near-ballistic BN-graphene-BN heterostructure field-effect transistors for energy efficient electronic applications

Flexible Graphene Solution‐Gated Field‐Effect Transistors: Efficient Transducers for Micro‐Electrocorticography

“…Single layer graphene layer presenting too many defects or second nucleation areas will result in electronic devices with large noise because of charge scattering processes [56][57][58] . Second, it has been shown that the coupling between the graphene layer and the substrate can influence the electronic noise of the device: reports on the use of h-BN as a substrate for graphene or suspended graphene showed a significant improvement in the noise performance, which has been tentatively attributed to a reduction of interfacial traps and the roughness of the substrate [59] . In our study the value of the field-effect mobility of our graphene SGFETS on polyimide substrates is below 1000 cm 2 /Vs, rather low compared to that obtained for graphene SGFETs prepared on silicon dioxide substrates using the same graphene quality which is around 2500 cm 2 /Vs.…”

“…This will certainly help increase the sensitivity and decrease the power consumption of graphene transistors. Furthermore, h-BN substrate has also been shown to help reduce the noise of the graphene transistors [59] . If noise levels close to 1 μV are reached, it will be possible to record not only the multiunit activity at the surface of the cortex but also spiking activity once the transistors are used in penetrating configurations.…”