Study of temperature dependence of positive charge generation in thin dielectric film of MOS structure under high-fields

Modification of dielectric films in MIS structures using the injection-thermal treatment

“…Irra diation of the MIS structures by γ rays to a dose of 10 6 rad showed that the analogous variations in the charge state of the structure controlled by the C-V characteristics occur at the injection of a charge of 0.5 mC/cm 2 at an injection current density of 1 mA/cm 2 and a charge of 2 mC/cm 2 at an injection current density of 0.1 mA/cm 2 . These results take into account the field dependence of the variation in the MIS structure charge state at the high field tunnel injection of elec trons into the dielectric and are consistent with the data reported in [15][16][17][18]. Figure 3a shows relative histograms of the MIS structure distribution with respect to the density of the charge injected before the sample breakdown, which characterize the injection treatment at an injec tion current density of 1 mA/cm 2 .…”

“…2. As was shown in studies [1,13,[16][17][18], the main mechanisms of the variation in the charge state of the MIS structures at the high field injection of electrons are the accumulation of a positive charge in the gate dielectric at the Si-SiO 2 interface, generation of surface states, and electron capture in the dielectric volume by initial and newly formed electron traps. The experimental data shown in Fig.…”

“…3a, the injection treatment makes it possible to reject the structures with rough charge defects (the density of charge injected before the breakdown is less than 0.1 mC/cm 2 ) and, thus, signif icantly increase the reliability of devices and inte grated circuit chips. However, at such treatment, the injection resource of the structures and devices on their basis can be reduced owing to charge degradation of both the dielectric film and the silicon-silicon dioxide interface, which leaks at the charge injection [1,[14][15][16][17][18]. The resource is increasingly reduced at increasing charge injected during the treatment (Fig.…”

Modification of Gate Dielectric in MOS Devices by Injection-Thermal and Plasma Treatments

“…In previous articles [5,6] it was shown that the negative charge which accumulates in PSG lm of structure Controlling of the amount of charge injected into the dielectric to breakdown, as a rule, was carried out at the amplitude of the current pulse I s (Fig. 2, section V).…”

Modification of MOS Devices by High-Field Electron Injection and Arc Plasma Jet Treatment

“…Another perspective way is development of new methods of modication of MOS structures characteristics [4,5]. At the present time a signicant part of the research is devoted to the problem of the MOS structure characteristics improvement using special treatment like plasma treatment, irradiation, thermal treatment and so on.…”