We demonstrate that, in contrast to most two-dimensional materials, ultrathin flakes of InSe are stable under ambient conditions. Despite their ambient stability, InSe-based nanodevices show an environmental p-type doping, suppressed by capping InSe with hexagonal boron nitride. By means of transport experiments, density functional theory and vibrational spectroscopy, we attribute the p-type doping assumed by uncapped InSe under an ambient atmosphere to the decomposition of water at Se vacancies. We have estimated the site-dependent adsorption energy of O2, N2, H2O, CO and CO2 on InSe. A stable adsorption is found only for the case of H2O, with a charge transfer of only 0.01 electrons per water molecule.

We present a lithography-free technique for fabrication of clean, high quality graphene devices. This technique is based on evaporation through hard Si shadow masks, and eliminates contaminants introduced by lithographical processes. We demonstrate that devices fabricated by this technique have significantly higher mobility values than those obtained by standard electron beam lithography. To obtain ultra-high mobility devices, we extend this technique to fabricate suspended graphene samples with mobilities as high as 120 000 cm 2 /(V·s).

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-The 1T polytype of TaS 2 exhibits voltagetriggered threshold switching as a result of a phase transition from nearly commensurate to incommensurate charge density wave states. Threshold switching, persistent above room temperature, can be utilized in a variety of electronic devices, e.g., voltage controlled oscillators. We evaluated the total-ionizing-dose response of thin film 1T -TaS 2 at doses up to 1 Mrad (SiO 2 ). The threshold voltage changed by less than 2% after irradiation, with persistent self-sustained oscillations observed through the full irradiation sequence. The radiation hardness is attributed to the high intrinsic carrier concentration of 1T -TaS 2 in both of the phases that lead to threshold switching. These results suggest that charge density wave devices, implemented with thin films of 1T -TaS 2 , are promising for applications in high radiation environments.

Abstract:We investigated a possible use of the magnonic interferometric switches in multi-valued logic circuits. The switch is a three-terminal device consisting of two spin channels where input, control, and output signals are spin waves. Signal modulation is achieved via the interference between the source and gate spin waves. We report experimental data on a micrometer scale prototype based on Y 3 Fe 2 (FeO 4 ) 3 structure. The output characteristics are measured at different angles of the bias magnetic field. The On/Off ratio of the prototype exceeds 36 dB at room temperature. Experimental data is complemented by the theoretical analysis and the results of micro magnetic simulations showing spin wave propagation in a micrometer size magnetic junction. We also present the results of numerical modeling illustrating the operation of a nanometersize switch consisting of just 20 spins in the source-drain channel. The utilization of spin wave interference as a switching mechanism makes it possible to build nanometerscale logic gates, and minimize energy per operation, which is limited only by the noise margin. The utilization of phase in addition to amplitude for information encoding offers an innovative route towards multi-state logic circuits. We describe possible implementation of the three-value logic circuits based on the magnonic interferometric switches. The advantages and shortcomings inherent in interferometric switches are also discussed.2

Double-gated graphene devices provide an important platform for understanding electrical and optical properties of graphene. Here we present transport measurements of single layer, bilayer and trilayer graphene devices with suspended top gates. In zero magnetic fields, we observe formation of pnp junctions with tunable polarity and charge densities, as well as a tunable band gap in bilayer graphene and a tunable band overlap in trilayer graphene. In high magnetic fields, the devices' conductance are quantized at integer and fractional values of conductance quantum, and the data are in good agreement with a model based on edge state equilibration at pn interfaces.

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We propose and demonstrate a technique for magnetic microstructure imaging via their interaction with propagating spin waves. In this approach, the object of interest is placed on top of a magnetic testbed made of material with low spin wave damping. There are micro-antennas incorporated in the testbed. Two of these antennas are used for spin wave excitation while another one is used for the detecting of inductive voltage produced by the interfering spin waves. The measurements are repeated for different phase differences between the spin wave generating antennas which is equivalent to changing the angle of illumination. The collected data appear as a 3D plotthe holographic image of the object. We present experimental data showing magnonic holographic images of a low-coercivity Si/Co sample, a high-coercivity sample made of SrFe 12 O 19 and a diamagnetic copper sample. We also present images of the three samples consisting of a different amount of SrFe 12 O 19 powder. The imaging was accomplished on a Y 3 Fe 2 (FeO 4) 3 testbed at room temperature. The obtained data reveal the unique magnonic signatures of the objects. Experimental data is complemented by the results of numerical modeling, which qualitatively explain the characteristic features of the images. Potentially, magnonic holographic imaging may complement existing techniques and be utilized for non-destructive in-situ magnetic object characterization. The fundamental physical limits of this approach are also discussed.