Total-Ionizing-Dose Effects on Threshold Switching in $1{T}$ -TaS2 Charge Density Wave Devices

Abstract

-The 1T polytype of TaS 2 exhibits voltagetriggered threshold switching as a result of a phase transition from nearly commensurate to incommensurate charge density wave states. Threshold switching, persistent above room temperature, can be utilized in a variety of electronic devices, e.g., voltage controlled oscillators. We evaluated the total-ionizing-dose response of thin film 1T -TaS 2 at doses up to 1 Mrad (SiO 2 ). The threshold voltage changed by less than 2% after irradiation, with persistent self-sustained oscillations observed through the full irradiation sequence. The radiation hardness is attributed to the high intrinsic carrier concentration of 1T -TaS 2 in both of the phases that lead to threshold switching. These results suggest that charge density wave devices, implemented with thin films of 1T -TaS 2 , are promising for applications in high radiation environments.

Low-frequency noise spectroscopy of charge-density-wave phase transitions in vertical quasi-2D 1T-TaS2 devices

“…TMDs have focused on the electron transport along the quasi-2D planes of these materials [4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19]. We are aware of only one prior detailed report on cross-plane electronic transport in vertical 1T-TaS2 devices [19].…”

“…These 1T-TaS2 CDW devices, operational at room temperature (RT), exhibit radiation hardness [15], and can be used for information processing applications [17][18].…”

Electron-phonon interactions and two-phonon modes associated with charge density wave in single crystalline1T−VSe2

“…Most 2D materials exist in two stable crystal structures such as 2H (trigonal prismatic) and 1T (octahedron), where the physical properties depend on the symmetry of the phases [13]. Among the several versatile properties, the CDW is a novel phenomenon realized in 1T and 2H polytypes of many metallic layered TMDCs, such as NbSe 2 , TaSe 2 , TaS 2 , VTe 2 , and VSe 2 [14][15][16][17][18][19][20]. Thus, these materials have received much scientific and technological attention for many-body interactions and potential applications in memory devices, transistors, logic-gate electronics, and oscillators [14][15][16][17][18][19][20].…”

“…Among the several versatile properties, the CDW is a novel phenomenon realized in 1T and 2H polytypes of many metallic layered TMDCs, such as NbSe 2 , TaSe 2 , TaS 2 , VTe 2 , and VSe 2 [14][15][16][17][18][19][20]. Thus, these materials have received much scientific and technological attention for many-body interactions and potential applications in memory devices, transistors, logic-gate electronics, and oscillators [14][15][16][17][18][19][20]. The origin of the CDW in TMDCs has not achieved any general scientific consensus and has remained a topic of investigation so far [5,[21][22][23][24].…”

Low-Frequency Current Fluctuations and Sliding of the Charge Density Waves in Two-Dimensional Materials

“…7−14 The latter opens up the possibility of practical applications of CDW devices in communications and radiation-hard electronics. 13,15 The most interesting of these materials, 1T-TaS 2 , undergoes a transition from the normal metallic phase to the incommensurate (IC) CDW phase at 545 K, then to the nearly commensurate (NC) CDW phase at 355 K, and finally to the commensurate (C) CDW phase at 180 K. 10−14 The NC-CDW phase consists of commensurate domains separated by regions that are incommensurate with the underlying crystal lattice. The transitions among CDW phases in 1T-TaS 2 films can be affected by the number of layers as well as the applied field.…”