Light atom species, such as Li, Mg, B, Be, Cl, F and Al implanted in bulk and epitaxial HgCdTe of compositions from 3 to 12 µm cut-off yielded n/p junctions. The nature of these junctions has not previously been understood. Implantation of light atoms has been observed to induce n-type electrically active defects which propagate deep into the material during the implantation process. The experiments, performed on an epitaxial wafer of ∼5 µm cut-off wavelength, showed an electron profile of the implanted layer 3 to 4 times deeper than the mean projected range determined by SIMS measurements. The results are in good agreement with the graded junction profile determined from C-V measurement, and have junction depths of 2–3 µm determined from EBIC measurements. It has been concluded that the junction formation mechanism in HgCdTe is determined primarily by radiation induced mobile defects.
Epitaxial layers of mercury cadmium telluride
false(Hg1−xCdxnormalTefalse)
with Cd composition (
x
value) from 0.17 to 1.0 have been grown in Te solution by a liquid phase epitaxial (LPE) technique. The layers are grown on
normalCdTe
substrates with (100), (110), (111)Cd, and (111)Te orientations. The best surface is obtained on the (111)Cd surface. Typical hole concentration of
normalHgCdTe
layers with Cd composition of 0.2 is on the order of
5×1016/cm3
with a Hall mobility of 400 cm2/Vsec at 77°K. X‐ray topographic analysis indicates that these epilayers have as good a crystalline structure as that of the substrates.
(GaAl)As double-heterostructure stripe geometry lasers have been fabricated using Be ion implantation. Pulsed threshold currents as low as 21 mA have been found. The light-vs-current characteristics were kink-free up to 10 mW output power and the measured differential quantum efficiency was 45%.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.