Be-implanted (GaAl)As stripe geometry lasers

Abstract

(GaAl)As double-heterostructure stripe geometry lasers have been fabricated using Be ion implantation. Pulsed threshold currents as low as 21 mA have been found. The light-vs-current characteristics were kink-free up to 10 mW output power and the measured differential quantum efficiency was 45%.

Low threshold Be implanted (GaAl)As laser on semi-insulating substrate

“…This laser is a lateral version of the Be implanted laser on a conductive substrate [7] . The laser has been monolithically integrated with a MESFET, giving rise to a direct modulation of the laser light.…”

“…The Be region has a minimal lateral diffusion under the SiO, layer and in most cases the p-n junction is located within the GaAs active region. This follows from the different diffusion coefficients of Be in GaAs and GaAlAs [7] . After a shallow Zn diffusion into the stripe side, an evaporation of Au-Zn is performed and alloyed for the p-0018-9197/80/0400-0390$00.75 0 1980 IEEE contact.…”

Semiconductor optoelectronic devices for free-space optical communications

“…4 [10]. The laser used was fabricated with a beryllium implanted stripe [11]. The HBT, which has the same structure as the laser (the only difference in the functioning of the devices was obtained by connecting them differently) achieved common emitter current gains in excess of 900.…”