Low threshold Be implanted (GaAl)As laser on semi-insulating substrate

Optoelectronic Integreated Circuits for Photonic Systems

“…The problems of surface carrier recombination and optical scattering in this laser structure which results in reducing laser beam power and quantum efficiency can be avoided if the lasing region is shifted away from the edge. This has been achieved by forming a p-type junction through Be ion implantation (Fig 1b) [12]. By carefully controlling the dose and energy of the implantation as well as the subsequent thermal annealing, the p-n junction can be placed precisely in the active layer.…”