Performance of PV HgCdTe arrays for 1-14-µm applications

Lanir, M.; Riley, Kent J.

doi:10.1109/t-ed.1982.20695

Cited by 45 publications

(5 citation statements)

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“…The Arrhenius plot of the differential resistance area product at zero bias (R 0 A) with respect to the inverse of temperature is shown in Figure 3b. This indicates that the dark current is dominated by different mechanisms in different temperature regimes [36]. From 77 to 140 K, the activation energy of 27 meV indicates that the device performance is limited by the temperature-insensitive defect-related leakage.…”

Section: Resultsmentioning

confidence: 99%

High Performance Planar Antimony-Based Superlattice Photodetectors Using Zinc Diffusion Grown by MBE

Saroj

Slivken

et al. 2022

Photonics

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In this letter, we report a mid-wavelength infrared (MWIR) planar photodetector based on InAs/InAs1−xSbx type-II superlattices (T2SLs) that has a cut-off wavelength of 4.3 μm at 77 K. The superlattice for the device was grown by molecular beam epitaxy while the planar device structure was achieved by Zinc diffusion process in a metal–organic chemical vapor deposition reactor. At 77 K, the peak responsivity and the corresponding quantum efficiency had the value of 1.42 A/W and 48% respectively at 3.7 μm under −20 mV for the MWIR planar photodetector. At 77 K, the MWIR planar photodetector exhibits a dark current density of 2.0 × 10−5 A/cm2 and the R0A value of ~3.0 × 102 Ω∙cm2 under −20 mV, which yielded a specific detectivity of 4.0 × 1011 cm·Hz1/2/W at 3.7 μm. At 150 K, the planar device showed a dark current density of 6.4 × 10−5 A/cm2 and a quantum efficiency of 49% at ~3.7 μm under −20 mV, which yielded a specific detectivity of 2.0 × 1011 cm·Hz1/2/W.

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Section: Resultsmentioning

confidence: 99%

High Performance Planar Antimony-Based Superlattice Photodetectors Using Zinc Diffusion Grown by MBE

Saroj

Slivken

et al. 2022

Photonics

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“…5. A common practice 21,22 in detector analysis is to attempt to determine the dark current mechanisms with a best fit to the R 0 A vs. 1/T curve in the temperature region where the slopes of the R 0 A vs. 1/T plot are changing, as shown in the middle part of Fig. 5.…”

Section: Resultsmentioning

confidence: 99%

Dark Currents in HgCdTe Photodiodes Passivated with ZnS/CdS

Juang

Chang

et al. 1999

J. Electrochem. Soc.

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Experimental and theoretical results are presented for current-voltage and dynamic resistance-voltage characteristics of Hg 1Ϫx Cd x Te ion-implanted p-n junction photodiodes with x Ϸ 0.22 passivated with ZnS/CdS layers. By measuring the temperature dependence of the dc characteristics in the temperature range 25-140 K, the dark current mechanisms are studied and the validity of the modeling is confirmed. It was found that the dark currents can be represented with three current components over a broad range of voltage and temperature. At high temperature (>90 K) and in low reverse bias region, the diffusion current dominates. On the other hand, at medium temperature (40-80 K) and medium reverse bias (< Ϫ0.15 V), trap-assisted tunneling plays an important role. At low temperature (<40 K) and in the medium reverse bias region (< Ϫ0.15 V), band-to-band tunneling is the key leakage current source. However, when the temperature is further lowered to 25 K and the applied reverse bias is very small (Ϫ0.15 to 0 V), the band-to-band tunneling current will be ruled out and the trap-assisted tunneling mechanism dominates again.

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“…LPE growth method offers,in comparison with bulk growth techniques, lower growth temperatures, shorter growth times, multilayered device structures, and better compositional homogeneity over large substrate areas. The versatility of LPE as a production tool for high performance device quality MCT epitaxial layers, with different Cd mole fractions and excellent compositional uniformity, is discussed in [16][17][18][19][20]. Today, detector arrays prepared from LPE based materials exhibit best performance, and majority of military IR applications use this technology.…”

Section: Liquid Phase Epitaxy (Lpe)mentioning

confidence: 99%

Advances in Infrared Detector Array Technology

Dhar¹,

Dat²,

Sood³

2013

Optoelectronics - Advanced Materials and Devices

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This Chapter covers recent advances in Short Wavelength Infrared (SWIR), Medium Wavelength Infrared (MWIR) and Long Wavelength Infrared (LWIR) materials and device technologies for a variety of defense and commercial applications. Infrared technology is critical for military and security applications, as well as increasingly being used in many commercial products such as medical diagnostics, drivers' enhanced vision, machine vision and a multitude of other applications, including consumer products. The key enablers of such infrared products are the detector materials and designs used to fabricate focal plane arrays (FPAs). Since the 1950s, there has been considerable progress towards the materials development and device design innovations. In particular, significant advances have been made during the past decade in the band-gap engineering of various compound semiconductors that has led to new and emerging detector architectures. Advances in optoelectronics related materials science, such as metamaterials and nanostructures, have opened doors for new approaches to apply device design methodologies, which are expected to offer enhanced performance and low cost products in a wide range of applications. This chapter reviews advancements in the mainstream detector technologies and presents different device architectures and discussions. The chapter introduces the basics of infrared detection physics and various infrared wavelength band characteristics. The subject is divided into individual infrared atmospheric transmission windows to address related materials, detector design and device performance. Advances in pixel scaling, junction formation, materials growth, and processing technologies are discussed. We discuss the SWIR band (1-3 microns) and address some of the recent advances in In-GaAs, SiGe and HgCdTe based technologies and their applications. We also discuss MWIR band that covers 3-5 microns, and its applications. Some of the key work discussed includes InSb, HgCdTe, and III-V based Strained Layer Super Lattice (SLS) and barrier detector tech

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Performance of PV HgCdTe arrays for 1-14-µm applications

Cited by 45 publications

References 0 publications

High Performance Planar Antimony-Based Superlattice Photodetectors Using Zinc Diffusion Grown by MBE

High Performance Planar Antimony-Based Superlattice Photodetectors Using Zinc Diffusion Grown by MBE

Dark Currents in HgCdTe Photodiodes Passivated with ZnS/CdS

Advances in Infrared Detector Array Technology

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