High performance Be⁺implanted InSb photodiodes

Infrared Photodiodes on II-VI and III-V Narrow-Gap Semiconductors

“…High performance InSb detectors have been fabricated with bulk material for decades. Typically, the p-on-n junctions are prepared on bulk crystals of n-type conductivity with electron concentration in the range 10 14 -10 15 cm -3 and mobility of the order of (2-6) 10 5 cm 2 V -1 s -1 at T = 77 K. Be ion implantation and thermal diffusion of Zn and Cd seems to be the most frequently used technological methods which allow to obtain sharp p + -n junctions (Mozzi and Lavine, 1970;Hurwitz and Donnelly, 1975;Rosbeck, 1981;Nishitani, 1983;Fujisada, 1985). The current status of InSb photodiode technology have presented by Wimmers et al (Wimmers, 1983;Wimmers, 1988).…”

Lasers and photodetectors for mid-infrared 2–3 μm applications

“…Usually, the InSb photodiodes are fabricated from bulk InSb wafers, and the p-n junction is formed by impurity diffusion and ion implantation. 55 Fabricated InSb photodiodes have a typical R 0 A product of ϳ10 6 ⍀ cm 2 and peak detectivity of 10 11 -10 12 cm Hz 1/2 / W at 77 K. 56 Because InSb is a more mature material than other IR detector materials, it has received the most attention for the focal plane array ͑FPA͒ applications. High performance InSb photodetectors are commercially available now.…”