Infrared Photodiodes on II-VI and III-V Narrow-Gap Semiconductors

Abstract

Native defects in HgCdTe, including dislocations and defect complexes, can act as Shockley-Read-Hall (SRH) centers due to their effect on the carrier lifetime. There is a large literature concerning the links of deep defects to the carrier lifetime in

Recombination and Trapping of Excess Carriers in n-InSb

“…In this case, the charge neutrality is expressed as 𝛿𝑛 = 𝛿𝑝 + 𝛿𝑝 𝑡 , where 𝛿𝑝 𝑡 is the density of trapped holes. In this case, the lifetimes of electrons and holes are different, with 𝜏 𝑛 > 𝜏 𝑝 , where the lifetime of electrons is determined by relation (7). In a good approximation, the transient constants in Eqs.…”

“…The dark current in InSb photodiodes was analyzed previously in [7]. At low forward and reverse biases, it is determined by the generation and recombination processes in the depletion region.…”

“…Subsequently, the acceptor-and donortype traps were discovered in the 𝑛-type material by the DLTS method, the recombination parameters of which differed significantly from those used in [5,6]. The minority carrier trapping has been observed in infrared photodiodes fabricated on the 𝑛type material [7]. Because traps in infrared photodiodes can be responsible for the tunneling current and low-frequency noise that degrades their performance [8,9], their identification remains an important issue.…”

Facile and Electrically Reliable Electroplated Gold Contacts to p-Type InAsSb Bulk-Like Epilayers

“…The development of InAsSb alloys led to replacing HgCdTe in MIR applications due to superior bond strengths, material stability, doping capability or high-quality A III -B V substrates [2]. The MIR photodetectors find considerable technological importance in medical diagnostics, IR imaging, environmental monitoring and chemical sensing [3][4][5][6]. Recently, InAsSb-based detector technology has been extended to the development of photodiodes with a variety of configurations such as n-i-p structure [3,4] or to the XBn barrier structures [7].…”

“…The MIR photodetectors find considerable technological importance in medical diagnostics, IR imaging, environmental monitoring and chemical sensing [3][4][5][6]. Recently, InAsSb-based detector technology has been extended to the development of photodiodes with a variety of configurations such as n-i-p structure [3,4] or to the XBn barrier structures [7].…”