Lasers and photodetectors for mid-infrared 2–3 μm applications

Lei, Wen; Jagadish, Chennupati

doi:10.1063/1.3002408

Cited by 56 publications

(22 citation statements)

References 75 publications

(72 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Attempts to move the InAs/InP Qdots emission wavelength other way around and extending beyond ~1.8 µm has recently attracted attention owing to the various cross-disciplinary field applications in spectroscopy and sensing [90] as discussed in section 1. In this respect, alteration of various growth parameters that result in the red shifting of InAs/InP Qdots emission; for instance, increasing the thickness of the InAs deposition or the growth interruption time before capping the dots or the thickness of the first capping layer in the double capping procedure, etc.…”

Section: Towards > 20 µM Wavelength Emissionmentioning

confidence: 99%

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

View full text Add to dashboard Cite

The advances in lasers, electronic and photonic integrated circuits (EPIC), optical interconnects as well as the modulation techniques allow the present day society to embrace the convenience of broadband, high speed internet and mobile network connectivity. However, the steep increase in energy demand and bandwidth requirement calls for further innovation in ultra-compact EPIC technologies. In the optical domain, innovation in the laser technologies beyond the current quantum well (Qwell) based laser technologies are already taking place and presenting very promising results. Homogeneously grown quantum dot (Qdot) lasers, can serve in the future energy saving information and communication technologies (ICT) as the work-horse for transmitting information through optical fiber. The encouraging results in the zero-dimensional (0D) structures emitting at 980 nm, in the form of vertical cavity surface emitting laser (VCSEL), are already operational at low threshold current density and capable of 40 Gbps error-free transmission at 108 fJ/bit. Eventual achievements for lasers operating in the O-, C-, L-, U-bands, and beyond will eventually lay the foundation for green ICT. On the hand, the inhomogeneously grown quasi 0D quantum dash (Qdash) lasers are brilliant solutions for potential broadband connectivity in server farms or access network. A single broadband Qdash laser operating in the stimulated emission mode can replace tens of discrete narrow-band lasers in dense wavelength division multiplexing (DWDM) transmission thereby further saving energy, cost and footprint. In this article, we review the progress of both Qdots and Qdash devices based on the InAs/InGaAlAs/InP and InAs/InGaAsP/InP material systems, from the angles of growth and device performance.2

show abstract

Section: Towards > 20 µM Wavelength Emissionmentioning

confidence: 99%

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

View full text Add to dashboard Cite

show abstract

“…These phenomena essentially effect the functioning of nanodevices (quantum cascade lasers and detectors), the main operating elements of which are the multi-layer RTS [5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Properties and temperature evolution of the spectrum of localized quasi-particles interacting with polarization phonons in two models

Tkach¹,

Seti²,

Voіtseкhіvsкa³

et al. 2016

Condens. Matter Phys.

View full text Add to dashboard Cite

Using the Feynman-Pines diagram technique, the energy spectrum of localized quasi-particles interacting with polarization phonons is calculated and analyzed in the wide range of energies at the finite temperature of the system. It is established that the general model of the system, besides the bound states known from the simplified model with an additional condition for the operator of quasi-particles number, contains the new bound states even for the systems with weak coupling. The contribution of multi-phonon processes into the formation of renormalized spectrum of the system is analyzed. The reasons of the appearance, behaviour and disappearance of separate pairs of bound states depending on the coupling constant and temperature are revealed.

show abstract

“…Recently, much effort has been devoted to InP-based InAsSb nanostructures 1-5 due to their promising applications in midinfrared 2 -3 m emitters, [6][7][8] which have a wide range of applications in military, telecommunication, molecular spectroscopy, biomedical surgery, environmental protection and manufacturing industry applications. As reported in previous work, the incorporation of antimony ͑Sb͒ into InAs quantum dots ͑QDs͒ causes dramatic change to island morphology, leading to the formation of high density of flat InAsSb quantum dashes ͑QDashes͒.…”

Section: Effect Of Matrix Materials On the Morphology And Optical Propmentioning

confidence: 99%

Effect of matrix material on the morphology and optical properties of InP-based InAsSb nanostructures

Lei

Tan

Jagadish

2009

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

Lasers and photodetectors for mid-infrared 2–3 μm applications

Cited by 56 publications

References 75 publications

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Properties and temperature evolution of the spectrum of localized quasi-particles interacting with polarization phonons in two models

Effect of matrix material on the morphology and optical properties of InP-based InAsSb nanostructures

Contact Info

Product

Resources

About