Ion Implantation Study of HgCdTe

Abstract

Light atom species, such as Li, Mg, B, Be, Cl, F and Al implanted in bulk and epitaxial HgCdTe of compositions from 3 to 12 µm cut-off yielded n/p junctions. The nature of these junctions has not previously been understood. Implantation of light atoms has been observed to induce n-type electrically active defects which propagate deep into the material during the implantation process. The experiments, performed on an epitaxial wafer of ∼5 µm cut-off wavelength, showed an electron profile of the implanted layer 3 to 4 times deeper than the mean projected range determined by SIMS measurements. The results are in good agreement with the graded junction profile determined from C-V measurement, and have junction depths of 2–3 µm determined from EBIC measurements. It has been concluded that the junction formation mechanism in HgCdTe is determined primarily by radiation induced mobile defects.

Characterization of Hg0.7Cd0.3Te n- on p-type structures obtained by reactive ion etching induced p- to n conversion

“…[1][2][3][4][5] Similar effects have been observed for Ion Beam Milling (IBM) of HgCdTe. In the case of HgCdTe it has been shown that RIE in H 2 /CH 4 plasma results in surface damage and type conversion of p-type HgCdTe to ntype.…”

FORMING OF A 128X128 MULTIELEMENT IR-PHOTODETECTORS BASED ON CdHgTe

“…Âóçüêîù³ëèííèé íàï³âïðîâ³äíèê CdHgTe º îñíîâíèì ìàòåð³àëîì äëÿ âèãîòîâëåííÿ ³íôðà-÷åðâîíèõ (²×) äåòåêòîð³â â øèðîêîìó ä³àïàçîí³ ñïåêòðó (3 -14 ìêì) [1][2][3][4][5][6]. Ó çâ'ÿçêó ç öèì âàaeëèâîþ º ðîçðîáêà òà âäîñêîíàëåííÿ òåõíîëî㳿 ôîðìóâàííÿ ôîòîïðèéìàëüíîãî ïðèñòðîþ íà áàç³ CdHgTe.…”

“…Âàaeëèâèì ôàêòîðîì äëÿ ôîðìóâàííÿ ÿê³ñíèõ p-n-ïåðå-õîä³â º ðàä³àö³éí³ äåôåêòè, à òàêîae ìåõàí³÷í³ íàïðóaeåííÿ, ÿê³ âèíèêàþòü â ³ìïëàíòîâàíîìó øàð³. Âëàñòèâîñò³ ³ ìåõàí³çìè ôîðìóâàííÿ p-n-ïåðåõîä³â â CdHgTe âèâ÷àëèñÿ â ðÿä³ ðîá³ò [6,[9][10][11]. Òàê ÿê ³îííà ³ìïëàíòàö³ÿ ïðîâîäèòüñÿ â åï³-òàêñ³éíèé øàð CdHgTe, òî îñíîâíèé ìåõàí³çì ôîðìóâàííÿ ëåãîâàíî¿ îáëàñò³ ïîëÿãຠâ òîìó, ùî ³îíè âèáèâàþòü àòîìè ðòóò³ ³ âñ³ ïåðåõîäÿòü ó ì³aeâóçëîâ³ àòîìè.…”

Radiation defect formation in graded-band-gap epitaxial structures Hg1−xCdxTe after boron ion implantation

“…One of the basic technological methods used to create photodiode structures is B ion implantation [5][6][7]. For a precise control of the implantation, a strong insight is necessary into the processes of formation and evolution of radiation defects after ion implantation, which in the case of MCT determines all the electro-physical properties in the irradiated region [6][7][8][9][10][11][12][13][14]. Thus the study of the process of radiation defect formation in MCT, with a variable composition x, is important.…”