Results on micromachining of Si substrates with untypical crystallographic orientations have been presented. The process was carried out in KOH and in KOH+IPA solutions with the use of specially designed mask patterns, adjusted individually to specific crystallographic orientations of etched substrate. Mask design and selection of Si substrates were followed by theoretical considerations. Grooves and holes with different inclination of sidewalls on differently oriented Si substrates have been obtained. They made the basis for developing two new seismic mass systems, fabricated on (1 1 0) and (1 1 2) Si wafers. The studies showed that the application of Si substrates with untypical crystallographic orientations gives new possibilities of extension of the 3D structure range fabricated by silicon anisotropic etching. Some design rules for the structures have been given.
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