The effect of isopropyl alcohol on etching rate and roughness of (1 0 0) Si surface etched in KOH and TMAH solutions

Zubel, Irena; Kramkowska, M.

doi:10.1016/s0924-4247(01)00648-3

Cited by 199 publications

(149 citation statements)

References 10 publications

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“…Regarding anisotropic wet etching, KOH (potassium hydroxide) is the most popular inorganic etchant conventionally used [8]. Although other etchants succeed in achieving a better smoothness, such as the organic compound TMAH (tetramethyl ammonium hydroxide), these are considerably more costly and in most cases neurotoxic, thus presenting a huge health risk that requires the appropriate safety measurements [9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Dynamic Wet Etching of Silicon through Isopropanol Alcohol Evaporation

et al. 2015

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Abstract:In this paper, Isopropanol (IPA) availability during the anisotropic etching of silicon in Potassium Hydroxide (KOH) solutions was investigated. Squares of 8 to 40 µm were patterned to (100) oriented silicon wafers through DWL (Direct Writing Laser) photolithography. The wet etching process was performed inside an open HDPE (High Density Polyethylene) flask with ultrasonic agitation. IPA volume and evaporation was studied in a dynamic etching process, and subsequent influence on the silicon etching was inspected. For the tested conditions, evaporation rates for water vapor and IPA were determined as approximately 0.0417 mL/min and 0.175 mL/min, respectively. Results demonstrate that IPA availability, and not concentration, plays an important role in the definition of the final structure. Transversal SEM (Scanning Electron Microscopy) analysis demonstrates a correlation between microloading effects (as a consequence of structure spacing) and the angle formed towards the (100) plane.

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Section: Introductionmentioning

confidence: 99%

Dynamic Wet Etching of Silicon through Isopropanol Alcohol Evaporation

et al. 2015

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“…Тому використання дешевих технологій одержання наноструктур Sі є однією з важливих проблем у розвитку нанотехнологій для їх подальшого застосування в наноелектромеханічних при-строях. Однією з таких технологій є викорис-тання методу хімічного травлення та хімічно-го парового осадження, що вже тривалий час сумісний з техногією виготовлення приладів мікро-і наноелектроніки [14][15][16][17][18][19][20][21][22].…”

Section: вступunclassified

Semiconductor Integrated Elements Based on Nanostructures Silicon for Information Systems

Druzhinin¹,

Kogut²,

Ховерко³

et al. 2015

SEMST

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“…Both planes are covered by pyramidal structures (called hillocks) bounded by the slowest etched (111) sidewall planes. Although hillocks also exist on (311) plane etched in weak-alkaline KOH solution saturated with isopropyl alcohol, their density on (100) surface etched in this solution is very low [4,6]. This suggests that there must be different mechanisms of interaction between alcohol molecules and Si(100) surface during anisotropic wet etching in the case of isopropanol and tert-butanol.…”

Section: Morphology Of Si(hkl) Planes Etched In the Solution Saturatementioning

confidence: 99%

“…To be able to control the process by surface active agents addition, it is necessary to understand the mechanism of additives interaction with silicon (hkl) surface during anisotropic wet chemical etching. Usually the effect of additives on etching results is assigned to anisotropic adsorption of their molecules on (hkl) oriented silicon surfaces [4][5][6]. In this model, surface active agent molecules form a layer on silicon surface, blocking access of etchant, what results in reduction of etch rate and change of the surface morphology.…”

Section: Introductionmentioning

confidence: 99%

Modifying of etching anisotropy of silicon substrates by surface active agents

Rola

Zubel

2011

Open Physics

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Abstract:The influence of alcohol additives on etch rate anisotropy of Si(hkl) planes has been studied. The etching processes were carried out in 3 and 5 M KOH aqueous solutions saturated and non-saturated with alcohols. Isopropanol, 1-propanol and tert-butanol were examined. It has been showed that the etching process cannot be controlled only by the surface tension of the solution. Saturation of the etching solution with alcohols modifies etch rate anisotropy, lowering the ratio of the etch rate of (110) and vicinal planes to the etch rate of (100) plane. The morphology of Si(hkl) planes etched in 3 M KOH solution saturated with tert-butyl alcohol has been studied in detail. Smooth (331) and (221) planes have been achieved in this solution. The (100) plane turned out to be densely covered by hillocks, opposite to the (100) plane etched in weak-alkaline solution saturated with isopropanol. To explain this phenomenon, the mechanism of hillocks formation on Si(100) surface has been proposed.

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The effect of isopropyl alcohol on etching rate and roughness of (1 0 0) Si surface etched in KOH and TMAH solutions

Cited by 199 publications

References 10 publications

Dynamic Wet Etching of Silicon through Isopropanol Alcohol Evaporation

Dynamic Wet Etching of Silicon through Isopropanol Alcohol Evaporation

Semiconductor Integrated Elements Based on Nanostructures Silicon for Information Systems

Modifying of etching anisotropy of silicon substrates by surface active agents

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