Modifying of etching anisotropy of silicon substrates by surface active agents

Rola, Krzysztof; Zubel, Irena

doi:10.2478/s11534-010-0114-9

Cited by 6 publications

(3 citation statements)

References 10 publications

(14 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This suggests that tert-butanol is somehow responsible for the occurrence of hillocks on the (1 0 0) surface. The possible explanation of this phenomenon is micromasking of the Si surface by the adsorbing tertiarybutyl alcohol molecules [17]. The hillocks formation in the solution with tert-butanol is also amplified by the substantial reduction of convex corner undercut, which stabilizes the appearing hillocks (because hillocks are bounded by convex corners).…”

Section: (1 0 0) Surface Morphology and Convex Corners Undercuttingmentioning

confidence: 99%

“…In the case of tert-butanol, three carbon atoms participate equally in the bonding, which makes the bonding stronger (figure 13(b)). Therefore, the molecules (or clusters of them) of tertiary-butyl alcohol are more difficult to be desorbed from the surface and, as a consequence, more likely to mask the surface from the etchant (causing hillocks formation) [17].…”

Section: Difference In Hillocks Formation On the (1 0 0) Surface In T...mentioning

confidence: 99%

See 1 more Smart Citation

Investigation of Si(h k l) surfaces etched in KOH solutions saturated withtertiary-butyl alcohol

Rola¹,

Zubel²

2011

J. Micromech. Microeng.

View full text Add to dashboard Cite

Anisotropic etching of silicon in KOH solutions saturated with tertiary-butyl alcohol (tert-butanol) was studied in this paper. The influence of KOH concentration of the solution with tert-butanol on Si(1 0 0) surface roughness and convex corners undercut were examined. It was shown that the largest reduction of convex corner undercut is achievable at low (3 M) concentration of KOH, at which, though, the (1 0 0) surface is densely covered with hillocks. The study on etch rate anisotropy and surface morphology of silicon substrates with different crystallographic orientations etched in 3 M KOH solutions with tert-butanol was conducted. The advantage of tert-butanol over isopropanol in terms of shaping three-dimensional structures in the (2 2 1) substrate was presented. The impact of agitation of the etching solution on roughness of (1 1 0) and (h h 1) surfaces and the distribution of hillocks on (1 0 0) and (h 1 1) surfaces were shown. Based on surface tension measurements and theoretical considerations, an adsorption explanation of the visible difference in (1 0 0) surface morphologies in the case of solutions saturated with tert-butanol and isopropanol was proposed. The KOH solution with tert-butanol could be particularly useful for texturing Si(1 0 0) surfaces, due to the possibility of achieving a dense surface coverage with hillocks in the solution saturated with the alcohol.

show abstract

Section: (1 0 0) Surface Morphology and Convex Corners Undercuttingmentioning

confidence: 99%

Section: Difference In Hillocks Formation On the (1 0 0) Surface In T...mentioning

confidence: 99%

Investigation of Si(h k l) surfaces etched in KOH solutions saturated withtertiary-butyl alcohol

Rola¹,

Zubel²

2011

J. Micromech. Microeng.

View full text Add to dashboard Cite

show abstract

“…Currently, isopropyl alcohol (IPA) is the most common additive in alkaline texturing process of mono-crystalline silicon to enhance texturing effect [7,8]. The effect of IPA was assumed to change the rate and mode of hydrogen detachment from the silicon surface [9,10] or be absorbed on the surface as a mask [11]. However, typical mono-crystalline texturing temperature is about 80°C which is quite close to the boiling point of IPA (82.4°C).…”

Section: Introductionmentioning

confidence: 99%

Investigation of Texturing for Mono-Crystalline Silicon without IPA

Zhou

Zhu

et al. 2013

AMM

View full text Add to dashboard Cite

Isopropyl alcohol (IPA) is widely used as an additive to enhance the alkaline texturing process of mono-crystalline silicon solar cells currently. However, due to its low boiling point and high volatilization, some negative effects are brought into large scale production especially in stability, cost and environment. In this paper, an IPA-free texturing process was studied by using other additive instead of IPA. The influences of concentration of KOH and additive on etching rate, surface morphology and weighted reflectance were investigated. It is found that the additive has an opposite effect on etching rate and pyramid size compared to KOH. The etching rate and average pyramid size decrease with the concentration of additive increased. The best weight reflectance of 10.8% and lowest average pyramid size of 1.1 um were obtained on mono-crystalline silicon surface by an optimized solution of 1.5 wt% KOH and 1.5 wt% additive at 80oC for 20 minutes. Finally, the effects of KOH and IPA-free additive on the texturing process were also discussed in detail.

show abstract

Silicon 45° micromirrors fabricated by etching in alkaline solutions with organic additives

et al. 2013

Self Cite

View full text Add to dashboard Cite

The fabrication of 45°micromirrors by silicon anisotropic etching in potassium hydroxide (KOH) and tetramethylammonium hydroxide (TMAH) solutions containing organic additives is investigated in this paper. The reflective planes are formed by {110} sidewall planes inclined at 45°towards the Si (100) wafer. Isopropyl alcohol and Triton X-100 surfactant are used as additives, because they are supposed to provide the etch rate ratio R(100)/R(110) [ 1, which is necessary for {110} sidewalls development. The fabricated spatial microstructures with 45°sidewalls are examined in terms of the {110} surface roughness and the quality of the {110} sidewall profile. The KOH solution saturated with the alcohol gives the striped {110} surface, though the stripes almost disappear after addition of Triton surfactant to KOH and TMAH etchants. The 45°sidewall profiles fully defined by {110} planes are obtained in KOH as well as TMAH solutions containing additives. The measurements of micromirrors' reflectivity indicate that replacement of the alcohol by Triton surfactant in the KOH solution reduces the optical power loss caused by the reflection. The achieved reflectivity is comparable with the one obtained by etching in the TMAH solution with surfactant.

show abstract

Modifying of etching anisotropy of silicon substrates by surface active agents

Cited by 6 publications

References 10 publications

Investigation of Si(h k l) surfaces etched in KOH solutions saturated withtertiary-butyl alcohol

Investigation of Si(h k l) surfaces etched in KOH solutions saturated withtertiary-butyl alcohol

Investigation of Texturing for Mono-Crystalline Silicon without IPA

Silicon 45° micromirrors fabricated by etching in alkaline solutions with organic additives

Contact Info

Product

Resources

About