The effect of alcohol additives on etching characteristics in KOH solutions

Zubel, Irena; Kramkowska, M.

doi:10.1016/s0924-4247(02)00265-0

Cited by 95 publications

(60 citation statements)

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“…The previous reports showed that the addition of butyl alcohols to the etching solution results in a high R(100)/R(hkl) etch rate ratio and a large reduction of convex corner undercut (Zubel and Kramkowska 2002;Rola and Zubel 2011). Therefore, in this paper, we study in detail the influence of butyl alcohols concentrations on surface morphologies and etch rates of (100) and (110) Si planes.…”

Section: Introductionmentioning

confidence: 95%

Impact of alcohol additives concentration on etch rate and surface morphology of (100) and (110) Si substrates etched in KOH solutions

Rola

Zubel

2012

Microsyst Technol

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The influence of alcohol concentration on etch rate and surface morphology of (100) and (110) Si planes was investigated in this paper. The etching processes were carried out in KOH solutions with different concentrations of isopropanol and butanols. The etch rate minima versus alcohol concentration were observed for all the alcohols used in the experiments. Furthermore, close to the concentrations of etch rate minima, the smooth (110) planes were obtained. However, the (100) surfaces were covered with hillocks at these concentrations. Based on the surface tension measurements and literature reports, the explanation of appearance of the etch rate minimum was suggested. In the proposed model, the adsorption maximum corresponds to the complete formation of an alcohol monolayer on Si surface and, consequently, to the etch rate minimum. At higher concentrations of alcohol, the monolayer disappears and the etch rate increases.

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Section: Introductionmentioning

confidence: 95%

Impact of alcohol additives concentration on etch rate and surface morphology of (100) and (110) Si substrates etched in KOH solutions

Rola

Zubel

2012

Microsyst Technol

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“…Therefore, to acquire smooth (hkl) planes which can form the sidewalls, other additives to the etching solution ought to be researched. In the last decade several alcohols have been studied in terms of their impact on the etching parameters [3].…”

Section: Introductionmentioning

confidence: 99%

Modifying of etching anisotropy of silicon substrates by surface active agents

Rola

Zubel

2011

Open Physics

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Abstract:The influence of alcohol additives on etch rate anisotropy of Si(hkl) planes has been studied. The etching processes were carried out in 3 and 5 M KOH aqueous solutions saturated and non-saturated with alcohols. Isopropanol, 1-propanol and tert-butanol were examined. It has been showed that the etching process cannot be controlled only by the surface tension of the solution. Saturation of the etching solution with alcohols modifies etch rate anisotropy, lowering the ratio of the etch rate of (110) and vicinal planes to the etch rate of (100) plane. The morphology of Si(hkl) planes etched in 3 M KOH solution saturated with tert-butyl alcohol has been studied in detail. Smooth (331) and (221) planes have been achieved in this solution. The (100) plane turned out to be densely covered by hillocks, opposite to the (100) plane etched in weak-alkaline solution saturated with isopropanol. To explain this phenomenon, the mechanism of hillocks formation on Si(100) surface has been proposed.

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“…Nevertheless, another method that consists in etching a silicon structure similar to a wagon wheel was used to characterize KOH [190] and it has recently been proved to obtain accurate characterizations for KOH and TMAH [191]. Furthermore, the usage of additional elements that modify the original anisotropy of the etchant have been studied, including the addition of Isopropyl alcohol (IPA) to KOH solution [192][193][194] and the addition of surfactant Triton X-100 to TMAH solutions [195]. A complete characterization of KOH, TMAH with and without additives was performed by Gosálvez et al, including results at several temperatures and etchants concentrations [191].…”

Section: Etch Rate Crystallographic Orientation Dependentmentioning

confidence: 99%

“…Nevertheless, the shape of the resulting structures is difficult to predict due to multiple experimental parameters, such as crystallographic orientations [176,191,276,277], composition of etchant solution (e.g. KOH [188,193] or TMAH [177,278]), its concentration and temperature [191,192], and usage of additives (e.g. Triton [175,195] or IPA [193,194]).…”

Section: Introduction and Drawbacks Of Previous Wet Etching Simulatorsmentioning

confidence: 99%

“…KOH [188,193] or TMAH [177,278]), its concentration and temperature [191,192], and usage of additives (e.g. Triton [175,195] or IPA [193,194]). As a consequence, an important effort has been made in last years to model the process accurately in order to avoid the need to perform several experiments until the desired structure is achieved.…”

Section: Introduction and Drawbacks Of Previous Wet Etching Simulatorsmentioning

confidence: 99%

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Study, Modelling and Implementation of the Level Set Method Used in Micromachining Processes

Álvaro¹

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"Sí com lo taur se'n va fuyt pel desert quantés sobrat per son semblant qui·l força, ne torna may fins ha cobrada força per destruir aquell qui l'ha desert: tot enaxí·m cové lunyar de vós, car vostre gest mon esforç ha confús: no tornaré fins del tot haja fus la gran pahor qui·m toll ser delitós." Ausiàs March, 1397 - †1459 Per a Marc AgradecimientosSin duda, todo el trabajo que hay detrás de esta tesis ha sido posible gracias a la colaboración y dedicación de muchos. Todos ellos merecen ser agradecidos por haber contribuido a su manera en la culminación de este trabajo.Agradecer sinceramente a mis directores y tutores, Ximo Cerdà y Ricardo Colom, por permitir formarme como investigador y ofrecerme sus consejos. Ellos me han tratado con respeto y nunca han puesto freno a mis ambiciones, más bien las han engrandecido. Gracias por guiar toda esta aventura.Una mención muy especial se merecen MiguelÁngel Gosálvez y Néstor Ferrando. Les tengo que agradecer la gran suerte que he tenido de poder colaborar con dos eminencias como ellos. Sus grandes conocimientos han permitido obtener los mejores resultados de este trabajo, además de haber sido una experiencia gratificante. Gracias por su constante apoyo y su ayuda infinita.Asimismo, dar las gracias también a Vicente Herrero, Jose María Monzó, Ana Ros y Ramón J. Aliaga. Ellos dieron vida a un ambiente de trabajo idóneo, aportándome mucho más que ayuda y conocimientos. Del mismo modoÁngel Tébar, Rafael Gadea y Jorge Daniel siempre han estado dispuestos a ayudar en todo cuanto han podido.Mi estancia en el instituto Fraunhofer de Erlangen me ha permitido acelerar mi formación y vivir unas experiencias de lo más satisfactorias. Todo ello ha sido gracias a la magnífica gente con la que he tenido el placer de colaborar y convivir. Gracias a Eberhard Bär y a toda la incontable gente del Fraunhofer IISB.Un mérito especial se merecen mi familia y mis amigos por aguantarme todo este tiempo sin perder la paciencia conmigo ni en los peores momentos. Es de un valor incalculable tener tantos hombros en los que poder dejarte caer para coger las fuerzas suficientes para seguir. Gracias Isidor y Lourdes, gracias Ferran y Andreu, y gracias Vicente, Enric y David.iii No podía faltar mi particular aimia, Nuria.Ella se merece un eterno agradecimiento por haber tenido que vivir todo esto conmigo. Compañera de todas y cada una de las experiencias, buenas y malas, de esta larga aventura. Animándome en todo momento, siempre ayudándome con un altruismo deslumbrante y enseñándome una inmensidad de conocimientos. Ella, ha sido y es, mi llir entre cards.Una vez más, muchísimas gracias a todos. iv SummaryThe main topic of the present thesis is the improvement of fabrication processes simulation by means of the Level Set (LS) method. The LS is a mathematical approach used for evolving fronts according to a motion defined by certain laws. The main advantage of this method is that the front is embedded inside a higher dimensional function such that updating this function instead of directly the front it...

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The effect of alcohol additives on etching characteristics in KOH solutions

Cited by 95 publications

References 11 publications

Impact of alcohol additives concentration on etch rate and surface morphology of (100) and (110) Si substrates etched in KOH solutions

Impact of alcohol additives concentration on etch rate and surface morphology of (100) and (110) Si substrates etched in KOH solutions

Modifying of etching anisotropy of silicon substrates by surface active agents

Study, Modelling and Implementation of the Level Set Method Used in Micromachining Processes

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