Silicon anisotropic etching in alkaline solutions IV

Zubel, Irena; Barycka, Irena; Kotowska, Kamilla; Kramkowska, M.

doi:10.1016/s0924-4247(00)00481-7

Cited by 110 publications

(49 citation statements)

References 16 publications

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“…[50] KOH is, however, generally avoided for integrated circuit applications due to contamination introduced by the potassium. For both kind of etchants, additives such as IPA (for KOH [51][52][53] and TMAH [54,55] ) can significantly alter the etch rate selectivity and etched surface morphologies, even though they are typically not involved directly in the etching reactions themselves. [51,52] We examined carefully the behavior of KOH and TMAH etchants for the procedures of Figure 1.…”

Section: Anisotropic Etchant/additives Study and Surface Morphologymentioning

confidence: 99%

Printable Single‐Crystal Silicon Micro/Nanoscale Ribbons, Platelets and Bars Generated from Bulk Wafers

Baca

Meitl

et al. 2007

Adv Funct Materials

123

119

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This article demonstrates a method for fabricating high quality single‐crystal silicon ribbons, platelets and bars with dimensions between ∼ 100 nm and ∼ 5 cm from bulk (111) wafers by using phase shift and amplitude photolithographic methods in conjunction with anisotropic chemical etching procedures. This “top‐down” approach affords excellent control over the thicknesses, lengths, and widths of these structures and yields almost defect‐free, monodisperse elements with well defined doping levels, surface morphologies and crystalline orientations. Dry transfer printing these elements from the source wafers to target substrates by use of soft, elastomeric stamps enables high yield integration onto wafers, glass plates, plastic sheets, rubber slabs or other surfaces. As one application example, bottom gate thin‐film transistors that use aligned arrays of ribbons as the channel material exhibit good electrical properties, with mobilites as high as ∼ 200 cm2 V–1 s–1 and on/off ratios > 104.

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Section: Anisotropic Etchant/additives Study and Surface Morphologymentioning

confidence: 99%

Printable Single‐Crystal Silicon Micro/Nanoscale Ribbons, Platelets and Bars Generated from Bulk Wafers

Baca

Meitl

et al. 2007

Adv Funct Materials

123

119

View full text Add to dashboard Cite

show abstract

“…This difference in etch rate between the different crystallographic orientations of silicon during etching is also known as the anisotropy ratio. It can be controlled by using a proper etchant as well as by the application of a suitable additive to the etching solution [2][3][4][5].…”

Section: Introductionmentioning

confidence: 99%

Wet chemical etching of silicon {111}: Etch pit analysis by the Lichtfigur method

Shah

Wolf

Enckevort

et al. 2009

Journal of Crystal Growth

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“…So it can etch silicon making small pyramids. Due to this reaction, two different solutions, KOH and TMAH, were used to form variable size pyramids [9,10]. Larger pyramids appeared when the wafer was treated by KOH/IPA solution than when it was treated by TMAH/ IPA solution.…”

Section: Resultsmentioning

confidence: 99%

Changes in efficiency of a solar cell according to various surface-etching shapes of silicon substrate

Kang

Tark

Lee

et al. 2011

Journal of Crystal Growth

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Silicon anisotropic etching in alkaline solutions IV

Cited by 110 publications

References 16 publications

Printable Single‐Crystal Silicon Micro/Nanoscale Ribbons, Platelets and Bars Generated from Bulk Wafers

Printable Single‐Crystal Silicon Micro/Nanoscale Ribbons, Platelets and Bars Generated from Bulk Wafers

Wet chemical etching of silicon {111}: Etch pit analysis by the Lichtfigur method

Changes in efficiency of a solar cell according to various surface-etching shapes of silicon substrate

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