Wet chemical etching of silicon {111}: Etch pit analysis by the Lichtfigur method

Shah, Ismail; Wolf, Benjamin M.; Enckevort, W.J.P. van; Vlieg, E.

doi:10.1016/j.jcrysgro.2008.12.021

Cited by 13 publications

(13 citation statements)

References 14 publications

(20 reference statements)

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“…Our results in the UV‐vis interval in Figure and, in general, the results in literature, supports an assumption about monotonous changes in the reflectance produced by texturing of Si surface. Therefore, the minimum reflectance can be attributed to the p‐cSi substrates etched in solution with Cu 2+ = 0.008 M and described by δ iS ≈ 0.54 (the edge of the steep change in Figure ) or, at least, can be expected to be obtained by the etching that results in textured surface with δ iS from the interval of the steep change in the dependence in Figure .…”

Section: Resultssupporting

confidence: 91%

“…Our model support the ideas reported in Refs. . The SEM images in Figures b and d suggest an idea about proportional increase in the dimensions of the pyramid‐like etched pits.…”

Section: Discussionmentioning

confidence: 82%

“…Considering the well known fact that the reflectance of rough surface is clearly lower than that of the flat one various approaches were used for the modification of the surface morphology. It was proved by the experiments that the light trapping can be obtained in the specific formations on the solid surfaces, namely wet chemical etched pits and pillars, amorphous Si layer . Intensive studies of the substrate texturing resulted in so called black silicon surface that can be produced by various methods reviewed in Ref.…”

Section: Introductionmentioning

confidence: 99%

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Minimization of Optical Reflectance by Copper Assisted Etching of Crystalline Silicon Surface

Treideris

Rėza

Kamarauskas

et al. 2018

Physica Status Solidi (a)

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Reduction of the optical reflectance to an absolute minimum by the metalassisted chemical etching (MACE) is investigated for the p-type crystalline silicon (100) plane wafers. The amount of the Cu additive and the composition of the etching solution identified by the proportion HF/(HF þ H 2 O 2 ) are the main variable parameters controlling the one step MACE. Pyramid like structures are produced on the surfaces. An influence of the variables on the surface topography and the related optical reflectance spectra is studied by measuring the spectra in the interval of the wavelengths from 400 to 1400 nm. Presence of a minimum that limits a reduction of the optical reflectance by the maskless micro-texturing of a smooth surface of a silicon wafer is experimentally demonstrated. The crucial stage in the etching is identified by the relative depth of the etched dips that results in the lowest reflectance. Under strictly controlled conditions the minimum reflectance is obtained using etchant with 0.08 M Cu-added. The lower and higher amounts of added Cu lead to an increase in the reflectance. The etching is explained by the localized microscopic galvanic cell model including the formation of the Cu-nanoparticles during the MACE and the changes in the reflectance are related to an enlargement of the etched pyramids.

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Section: Resultssupporting

confidence: 91%

“…Our model support the ideas reported in Refs. . The SEM images in Figures b and d suggest an idea about proportional increase in the dimensions of the pyramid‐like etched pits.…”

Section: Discussionmentioning

confidence: 82%

Section: Introductionmentioning

confidence: 99%

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Minimization of Optical Reflectance by Copper Assisted Etching of Crystalline Silicon Surface

Treideris

Rėza

Kamarauskas

et al. 2018

Physica Status Solidi (a)

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“…During dissolution, silicates, Si(OH) 4, are formed (Fig.3) and which have the tendency to polymerize into siloxanes, (silicates chains that exhibit high viscosity). [31]. Their presence at the sample surface will lead to steric effects and thus influence etch rate [30] and hence pore shape.…”

Section: Surface Topographymentioning

confidence: 99%

The Initial Phase of Photoelectrochemical Anodization of Si in Alkaline Media Investigated by Synchrotron Radiation Photoelectron Spectroscopy (SRPES) and Scanning Probe Microscopy (SPM)

Letilly

Skorupska

Aggour³

et al. 2013

MRS Proc.

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Anodic oxide formation and chemical and electrochemical etching of n-Si(111) have been investigated in alkaline media. Due to the complexity of the processes, the investigation has been restricted to the initial phase where a transitory anodic photocurrent peak is observed slightly positive from the open circuit potential (ocp). In-system photoelectron spectroscopy, performed at the U 49/2 beamline at Bessy, shows sub-monolayer silicon surface oxidation and remnant H-termination, indicating island-type oxide formation. Scanning probe microscopy shows the formation of macropores with 300-500 nm diameter and an average depth of 5-8 nm. The discussion comprises chemical and electrochemical dissolution mechanisms and routes to development of nanoemitter fuel generating devices.

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“…The process is based on the significant difference in etch rate between the {100} and {110} faces versus the {111} face of monocrystalline silicon. The difference in etching rate between different crystallographic orientations of silicon is also known as the anisotropy ratio or anisotropic etching [12]. Using this potential for the manufacturing of tools for blanking processes additionally offers advantages on the surface quality and form modifications like controlling the edge radius of a vertical geometry.…”

Section: Introductionmentioning

confidence: 99%

Use of Monocrystalline Silicon as Tool Material for Highly Accurate Blanking of Thin Metal Foils

Hildering¹,

Engel²,

Merklein³

2011

AIP Conference Proceedings

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Wet chemical etching of silicon {111}: Etch pit analysis by the Lichtfigur method

Cited by 13 publications

References 14 publications

Minimization of Optical Reflectance by Copper Assisted Etching of Crystalline Silicon Surface

Minimization of Optical Reflectance by Copper Assisted Etching of Crystalline Silicon Surface

The Initial Phase of Photoelectrochemical Anodization of Si in Alkaline Media Investigated by Synchrotron Radiation Photoelectron Spectroscopy (SRPES) and Scanning Probe Microscopy (SPM)

Use of Monocrystalline Silicon as Tool Material for Highly Accurate Blanking of Thin Metal Foils

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