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: Catalysed by the success of mechanical exfoliated free-standing graphene, two dimensional (2D) semiconductor materials are successively an active area of research. Silicene is a monolayer of silicon (Si) atoms with a low-buckled honeycomb lattice possessing a Dirac cone and massless fermions in the band structure. Another advantage of silicene is its compatibility with the Silicon wafer fabrication technology. To effectively apply this 2D material in the semiconductor industry, it is important to carry out theoretical studies before proceeding to the next step. In this paper, the overview of silicene and silicene nanoribbons (SiNRs) is described. After that, the theoretical studies to engineer the bandgap of silicene are reviewed. Recent theoretical advancement on the applications of silicene for various field-effect transistors (FET) structures are also discussed. Theoretical studies of silicene have shown promising results for the application as FETs and the efforts to study the performance of bandgap-engineered silicene FET should continue to improve the device performance.

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Graphene Nanoribbon Simulator (GNRSIM) is developed using MATLAB Graphical User Interface Development Environment to study the electronics properties of graphene nanoribbons (GNRs). The main focus of this research is the simulation effects of single vacancy 1 in graphene nanoribbons lattices on electronic structure. The band structure and density of states are explored by using tight binding approximation where a Hamiltonian operator with nearest-neighbor interactions is introduced. The simulator has a wide range of input parameters where user can select armchair or zigzag GNR. The size of the lattices namely width and length can be varied. The location of the vacancy defect can be pinpoint by providing the row and column of the missing atom. The limitation of GNRSIM at present is that it can only accept a single atom vacancy. GNRSIM is able to be executed as a standalone application software in understanding the fundamental properties of semiconductor material and device engineering through ab-initio calculations.

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