Electronic properties of graphene nanoribbons with line-edge roughness doped with nitrogen and boron

Wong, Kien Liong; Chuan, Mu Wen; Hamzah, Afiq; Rusli, Shahrizal; Alias, Nurul Ezaila; Sultan, Suhana Mohamed; Lim, Cheng Siong; Tan, Michael Loong Peng

doi:10.1016/j.physe.2019.113841

Cited by 13 publications

(7 citation statements)

References 34 publications

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“…The graphene (GN) is a 2D single layer crystalline material with a honeycomb (HC) structure, comprised of sp 2 hybridized carbon atoms. In early 1947, Wallance et al reported the 2D graphite with zero activation energy by using "tight binding" approximation which was later experimentally observed in 2004 [28][29][30][31]. Due the excellent properties of GN, it is an excellent candidate for use in modern electronics.…”

Section: Synthesis Of Graphene (Gn) and Structural Featuresmentioning

confidence: 99%

“…Due the excellent properties of GN, it is an excellent candidate for use in modern electronics. There are two major types of GN, those are zigzag and armchair [28]. Figure 2 exhibits the electrons in carbon atoms (Figure 2a), energy comparison at ground state electronic configuration (Figure 2b), shape of the orbitals and hybridized orbitals (Figure 2c), crystal lattice and unit cells ( Figure 2d), and bond formation (σ and π) (Figure 2e).…”

Section: Synthesis Of Graphene (Gn) and Structural Featuresmentioning

confidence: 99%

“…In addition, the monolayer GN has no band gap which is due to the free moving π electrons which offer weak van der Waals forces between the graphene layers [29]. Due to the weak Van der Waals forces the graphene can be synthesized from bulk graphite (Figures 3 and 4) [28][29][30].…”

Section: Synthesis Of Graphene (Gn) and Structural Featuresmentioning

confidence: 99%

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Recent Advancement of Electromagnetic Interference (EMI) Shielding of Two Dimensional (2D) MXene and Graphene Aerogel Composites

2020

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The two Dimensional (2D) materials such as MXene and graphene, are most promising materials, as they have attractive properties and attract numerous application areas like sensors, supper capacitors, displays, wearable devices, batteries, and Electromagnetic Interference (EMI) shielding. The proliferation of wireless communication and smart electronic systems urge the world to develop light weight, flexible, cost effective EMI shielding materials. The MXene and graphene mixed with polymers, nanoparticles, carbon nanomaterial, nanowires, and ions are used to create materials with different structural features under different fabrication techniques. The aerogel based hybrid composites of MXene and graphene are critically reviewed and correlate with structure, role of size, thickness, effect of processing technique, and interfacial interaction in shielding efficiency. Further, freeze drying, pyrolysis and hydrothermal treatment is a powerful tool to create excellent EMI shielding aerogels. We present here a review of MXene and graphene with various polymers and nanomaterials and their EMI shielding performances. This will help to develop a more suitable composite for modern electronic systems.

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Section: Synthesis Of Graphene (Gn) and Structural Featuresmentioning

confidence: 99%

Section: Synthesis Of Graphene (Gn) and Structural Featuresmentioning

confidence: 99%

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Recent Advancement of Electromagnetic Interference (EMI) Shielding of Two Dimensional (2D) MXene and Graphene Aerogel Composites

2020

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“…Graphene and its polymers have excellent photoelectric and chemical properties, which are widely used in transistor and photoelectric devices [5][6][7][8][9][10][11][12]. However, graphene is a zero-band gap semiconductor with poor current switching ability, which limits its application in photoelectric devices [13]. Since the band gap is an essential property for logic circuit of field-effect transistors [14], we should find the substitutional materials for graphene.…”

Section: Introductionmentioning

confidence: 99%

Structural and Electronic Properties of Heterostructures Composed of Antimonene and Monolayer MoS2

Zhou

2020

Nanomaterials

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Antimonene is found to be a promising material for two-dimensional optoelectronic equipment due to its broad band gap and high carrier mobility. The van der Waals heterostructure, as a unique structural unit for the study of photoelectric properties, has attracted great attention. By using ab initio density functional theory with van der Waals corrections, we theoretically investigated the structural and electronic properties of the heterostructures composed of antimonene and monolayer MoS2. Our results revealed that the Sb/MoS2 hetero-bilayer is an indirect semiconductor with type-II band alignment, which implies the spatial separation of photogenerated electron–hole pairs. Due to the weak van der Waals interlayer interactions between the adjacent sheets of the hetero-bilayer systems, the band structures of isolated antimonene and monolayer MoS2 are preserved. In addition, a tunable band gap in Sb/MoS2 hetero-bilayer can be realized by applying in-plane biaxial compressing/stretching. When antimonene and monolayer MoS2 are stacked into superlattices, the indirect semiconductors turn into direct semiconductors with the decreased band gaps. Our results show that the antimonene-based hybrid structures are good candidate structures for photovoltaic devices.

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“…The atomic structure of the AlSi 3 monolayer (as shown in Fig 1 ) was adapted from published DFT study [ 29 ]. By using the derivation from time-independent Schrödinger equation [ 30 ], the electronic transport effective mass was then obtained by using nearest neighbour tight-binding (NNTB) model and parabolic band assumptions as and for electrons and holes, respectively. The material-level modelling was shown in details in our previous work [ 22 ].…”

Section: Methodsmentioning

confidence: 99%

Device performances analysis of p-type doped silicene-based field effect transistor using SPICE-compatible model

et al. 2022

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Moore’s Law is approaching its end as transistors are scaled down to tens or few atoms per device, researchers are actively seeking for alternative approaches to leverage more-than-Moore nanoelectronics. Substituting the channel material of a field-effect transistors (FET) with silicene is foreseen as a viable approach for future transistor applications. In this study, we proposed a SPICE-compatible model for p-type (Aluminium) uniformly doped silicene FET for digital switching applications. The performance of the proposed device is benchmarked with various low-dimensional FETs in terms of their on-to-off current ratio, subthreshold swing and drain-induced barrier lowering. The results show that the proposed p-type silicene FET is comparable to most of the selected low-dimensional FET models. With its decent performance, the proposed SPICE-compatible model should be extended to the circuit-level simulation and beyond in future work.

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Electronic properties of graphene nanoribbons with line-edge roughness doped with nitrogen and boron

Cited by 13 publications

References 34 publications

Recent Advancement of Electromagnetic Interference (EMI) Shielding of Two Dimensional (2D) MXene and Graphene Aerogel Composites

Recent Advancement of Electromagnetic Interference (EMI) Shielding of Two Dimensional (2D) MXene and Graphene Aerogel Composites

Structural and Electronic Properties of Heterostructures Composed of Antimonene and Monolayer MoS2

Device performances analysis of p-type doped silicene-based field effect transistor using SPICE-compatible model

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