2D Honeycomb Silicon: A Review on Theoretical Advances for Silicene Field-Effect Transistors

Abstract

: Catalysed by the success of mechanical exfoliated free-standing graphene, two dimensional (2D) semiconductor materials are successively an active area of research. Silicene is a monolayer of silicon (Si) atoms with a low-buckled honeycomb lattice possessing a Dirac cone and massless fermions in the band structure. Another advantage of silicene is its compatibility with the Silicon wafer fabrication technology. To effectively apply this 2D material in the semiconductor industry, it is important to carry out theoretical studies before proceeding to the next step. In this paper, the overview of silicene and silicene nanoribbons (SiNRs) is described. After that, the theoretical studies to engineer the bandgap of silicene are reviewed. Recent theoretical advancement on the applications of silicene for various field-effect transistors (FET) structures are also discussed. Theoretical studies of silicene have shown promising results for the application as FETs and the efforts to study the performance of bandgap-engineered silicene FET should continue to improve the device performance.

Germanium‐based monoelemental and binary two‐dimensional materials: Theoretical and experimental investigations and promising applications

“…In recent years, several reviews and monographs on Si‐based 2D materials have been published 8,26,27,62–67 . However, Ge‐based 2D materials have rarely been reviewed despite the important findings and extensive theoretical and experimental research on the output of these unique materials.…”

“…Therefore, it is worth exploring whether the application scope of 2D Ge will be wider than that of 2D Si. In recent years, several reviews and monographs on Si-based 2D materials have been published. 8,26,27,[62][63][64][65][66][67] However, Ge-based 2D materials have rarely been reviewed despite the important findings and extensive theoretical and experimental research on the output of these unique materials. To bridge this gap, here, we present a methodically structured review on the latest progress in predictive modeling, fabrication, and fundamental physical property modulation of Ge-based 2D materials, viz., germanene and its derivatives, Ge-IVA binary compounds, Ge-VA binary compounds, and Ge-VIA binary compounds (Scheme 1).…”

Device performances analysis of p-type doped silicene-based field effect transistor using SPICE-compatible model

“…Concerning the computational models of silicene-based transistors [ 16 , 17 ], rigorous efforts were invested by many groups of researchers. The absence of bandgap in pristine silicene did not halt its exploration for nanotransistor applications.…”

Semi-analytical modelling and evaluation of uniformly doped silicene nanotransistors for digital logic gates

“…The development of two-dimensional (2D) materials has been motivated by the success of monolayer honeycomb carbon (C)-graphene [11]. While the discovery of graphene has more than 15 years of history, the honeycomb Si-based monolayer-silicene has only attracted research interest in the recent years as shown by the trend of publication numbers [12,13] despite its potential compatibility with the present Si-dominant fabrication processes. In 2015, Tao et al [14] demonstrated the first silicene-based transistor using synthesis-transfer fabrication technique.…”