Electronic properties and carrier transport properties of low-dimensional aluminium doped silicene nanostructure

Chuan, Mu Wen; Wong, Kien Liong; Hamzah, Afiq; Rusli, Shahrizal; Alias, Nurul Ezaila; Lim, Cheng Siong; Tan, Michael Loong Peng

doi:10.1016/j.physe.2019.113731

Cited by 13 publications

(11 citation statements)

References 54 publications

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“…Subsequently, the transverse effective masses (in the zigzag direction) of these materials are obtained by using parabolic band approximation. The detailed procedures to obtain the effective masses can be found in Ref [ 33 ]. Although previous work [ 33 ] shows only the modelling procedures for the p-type AlSi 3 nanosheet, the same technique is repeated to compute the electronic properties of n-type PSi 3 nanosheet, in order to obtain both type of transistors for CMOS applications.…”

Section: Modelling Proceduresmentioning

confidence: 99%

“…The detailed procedures to obtain the effective masses can be found in Ref [ 33 ]. Although previous work [ 33 ] shows only the modelling procedures for the p-type AlSi 3 nanosheet, the same technique is repeated to compute the electronic properties of n-type PSi 3 nanosheet, in order to obtain both type of transistors for CMOS applications. Table 1 summarises the important electronic properties of the AlSi 3 and PSi 3 nanosheets, where m 0 is the constant for electron rest mass.…”

Section: Modelling Proceduresmentioning

confidence: 99%

“…In this paper, the circuit-level performance of n-type and p-type uniformly doped silicene FETs, as shown in Fig 1 , are assessed by developing a SPICE-compatible model [ 32 ]. This circuit-level model is developed by extending our previous works on uniformly doped silicene model at the material-level [ 33 ] and device-level [ 34 ]. Section 2 describes the detailed modelling procedures employed in this work.…”

Section: Introductionmentioning

confidence: 99%

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Semi-analytical modelling and evaluation of uniformly doped silicene nanotransistors for digital logic gates

et al. 2021

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Silicene has attracted remarkable attention in the semiconductor research community due to its silicon (Si) nature. It is predicted as one of the most promising candidates for the next generation nanoelectronic devices. In this paper, an efficient non-iterative technique is employed to create the SPICE models for p-type and n-type uniformly doped silicene field-effect transistors (FETs). The current-voltage characteristics show that the proposed silicene FET models exhibit high on-to-off current ratio under ballistic transport. In order to obtain practical digital logic timing diagrams, a parasitic load capacitance, which is dependent on the interconnect length, is attached at the output terminal of the logic circuits. Furthermore, the key circuit performance metrics, including the propagation delay, average power, power-delay product and energy-delay product of the proposed silicene-based logic gates are extracted and benchmarked with published results. The effects of the interconnect length to the propagation delay and average power are also investigated. The results of this work further envisage the uniformly doped silicene as a promising candidate for future nanoelectronic applications.

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Section: Modelling Proceduresmentioning

confidence: 99%

Section: Modelling Proceduresmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Semi-analytical modelling and evaluation of uniformly doped silicene nanotransistors for digital logic gates

et al. 2021

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“…The band structures of the defective ZSiNRs are plotted by using the dispersion relation from the solutions of energy eigenvalues from the Hamiltonian matrices. The defective ZSiNRs are modelled using the NNTB approach based on the time-independent Schrödinger in matrix form [15][16][17]: (1) where ℎ( ) is the Hamiltonian matrix, 0 is the time-independent wave function and is the energy. In this work, the Hamiltonian matrix is divided into the -matrix and -matrix which describes the interactions of silicon atoms in the zigzag unit cell chain and the interations among the zigzag unit cell chains respectively.…”

Section: Band Structuresmentioning

confidence: 99%

Electronic properties of zigzag silicene nanoribbons with single vacancy defect

Chuan

Wong

Hamzah

et al. 2020

IJEECS

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<p>Silicene is envisaged as one of the two-dimensional (2D) materials for future nanoelectronic applications. In addition to its extraordinary electronic properties, it is predicted to be compatible with the silicon (Si) fabrication technology. By using nearest neighbour tight-binding (NNTB) approach, the electronic properties of zigzag silicene nanoribbons (ZSiNRs) with single vacancy (SV) defects are modelled and simulated. For 4-ZSiNR with L=2, the band structures and density of states (DOS) are computed based on SV incorporated ZSiNRs at varying defect locations. The results show that the SV defect will shift the band structure and increase the peak of DOS while the bandgap remain zero. This work provides a theoretical framework to understand the impact of SV defect which is an inevitable non-ideal effect during the fabrication of silicene nanoribbons (SiNRs).</p>

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“…The absence of bandgap in pristine silicene did not halt its exploration for nanotransistor applications. In spite of the challenges, various bandgap engineering techniques have been explored, and such examples include confinement through silicene nanoribbons (SiNRs) [ 18 – 20 ], co-decoration [ 21 ], and doping [ 22 – 24 ]. Among the aforementioned techniques, doping is the most commonly employed technique in the semiconductor industry to alter the electronic properties [ 25 ].…”

Section: Introductionmentioning

confidence: 99%

Device performances analysis of p-type doped silicene-based field effect transistor using SPICE-compatible model

et al. 2022

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Moore’s Law is approaching its end as transistors are scaled down to tens or few atoms per device, researchers are actively seeking for alternative approaches to leverage more-than-Moore nanoelectronics. Substituting the channel material of a field-effect transistors (FET) with silicene is foreseen as a viable approach for future transistor applications. In this study, we proposed a SPICE-compatible model for p-type (Aluminium) uniformly doped silicene FET for digital switching applications. The performance of the proposed device is benchmarked with various low-dimensional FETs in terms of their on-to-off current ratio, subthreshold swing and drain-induced barrier lowering. The results show that the proposed p-type silicene FET is comparable to most of the selected low-dimensional FET models. With its decent performance, the proposed SPICE-compatible model should be extended to the circuit-level simulation and beyond in future work.

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Electronic properties and carrier transport properties of low-dimensional aluminium doped silicene nanostructure

Cited by 13 publications

References 54 publications

Semi-analytical modelling and evaluation of uniformly doped silicene nanotransistors for digital logic gates

Semi-analytical modelling and evaluation of uniformly doped silicene nanotransistors for digital logic gates

Electronic properties of zigzag silicene nanoribbons with single vacancy defect

Device performances analysis of p-type doped silicene-based field effect transistor using SPICE-compatible model

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