Performance metrics of current transport in pristine graphene nanoribbon field-effect transistors using recursive non-equilibrium Green's function approach

Wong, Kien Liong; Chuan, Mu Wen; Hamzah, Afiq; Rusli, Shahrizal; Alias, Nurul Ezaila; Sultan, Suhana Mohamed; Lim, Cheng Siong; Tan, Michael Loong Peng

doi:10.1016/j.spmi.2020.106624

Cited by 6 publications

(3 citation statements)

References 43 publications

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“…Te NanoTCAD ViDES simulation tool performs the calculations based on the tightbinding Hamiltonian and self-consistent solutions of 3-D Poisson and Schrödinger equations with open boundary conditions within the nonequilibrium Green's function formalism [15,16]. Non-equilibrium Green's function formalism (NEGF) formalism provides the atomistic description of the channel material, producing relatively accurate results in investigating the performance of GNRFETs in the sub-10 nm channel length regime [21]. Green's function [15,16] can be expressed as follows:…”

Section: Simulation Proceduresmentioning

confidence: 99%

Device Performance of Double-Gate Schottky-Barrier Graphene Nanoribbon Field-Effect Transistors with Physical Scaling

Chuan

Misnon

Alias

et al. 2023

Journal of Nanotechnology

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Moore’s law is approaching its limit due to various challenges, especially the size limit of the transistors. The International Roadmap for Devices and Systems (IRDS), the successor of International Technology Roadmap for Semiconductors (ITRS), has included 2D materials as an alternative approach for the More-than-Moore nanoelectronic applications. Among the 2D materials, graphene nanoribbons (GNRs) have been widely used as the alternative channel materials of field-effect transistors (FETs). In this paper, the impacts of physical scaling on the device performance of double-gate Schottky-barrier GNR FETs (DG-SB-GNRFETs) are investigated by using NanoTCAD ViDES simulation tool based on the tight-binding Hamiltonian and self-consistent solutions of 3D Poisson and Schrödinger equations with open boundary conditions within the nonequilibrium Green’s function formalism. The extracted device performance parameters include the subthreshold swing and on-to-off current ratio. The results suggest that the performances of DG-SB-GNRFETs are strongly dependent on their physical parameters, especially the widths of the GNRs.

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Section: Simulation Proceduresmentioning

confidence: 99%

Device Performance of Double-Gate Schottky-Barrier Graphene Nanoribbon Field-Effect Transistors with Physical Scaling

Chuan

Misnon

Alias

et al. 2023

Journal of Nanotechnology

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“…The solution of the quantum transport equations (QTE) as described above is obtained by using the NEGF methodology [24][25][26][27][28][29][30][31][32][33][34][35][36][37] which involves solving the channel Poisson equation self-consistently. The flowchart for the simulation methodology is shown in figure 10.…”

Section: Source Drainmentioning

confidence: 99%

Investigation of the role of defects on channel density profiles and their effect on the output characteristics of a nanowire FET

Cariappa¹,

Sarkar²

2021

Eng. Res. Express

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This work investigates the effect of defects on the electron density profiles of nanowire FETs with a rectangular cross-section. It also presents a framework for the discretization of the nanowire channels with defects. A self-consistent procedure using Schrodinger-Poisson solver with density matrix formalism calculates the local electron density profiles. The local electron density decreases due to defect-induced scattering potentials. The electron density profiles vary according to the nature of the intrinsic defects. The effect of defect-induced potentials on the output characteristics of the nanowire FET device is studied using the non-equilibrium Green's function (NEGF) methodology. An increase in scattering potential in the nanowire channel causes a considerable decrease in the saturation voltage and current. This results in a faster saturation which changes the overall device performance. Hence, defect-controlled channels can be utilized to fabricate FETs with desired characteristics.

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“…of other low-dimensional nanotransistors[80][81][82][83]. In contrast to the channel length, reducing oxide thickness yields significant capacitance-driven gate control over the drain current.…”

mentioning

confidence: 99%

A review on transport characteristics and bio-sensing applications of silicene

Ghosal,

Bandyopadhyay,

Chowdhury

et al. 2023

Rep. Prog. Phys.

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Silicene, a silicon counterpart of graphene, hass been predicted to possess massless Dirac fermions.Compared to graphene, the effective spin–orbit interaction is quite significant compared to grapheneand as a result, buckling in silicene opens a gap of 1.55 meV at the Dirac point. This band gap can befurther tailored by applying in plane stress, an external electric field, chemical functionalization anddefects. This special feature allows silicene and its various derivatives as potential candidates fordevice applications. In this short review, we would like to explore the transport features of the pristinesilicene and its possible nano derivatives. Besides, the recent progress in biosensor applications ofsilicene and its hetero-structures will be highlighted.We hope the results obtained from recentexperimental and theoretical studies in silicene will setup a benchmark in diverse applications such asin spintronics, bio-sensing and opto-electronic devices.

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Performance metrics of current transport in pristine graphene nanoribbon field-effect transistors using recursive non-equilibrium Green's function approach

Cited by 6 publications

References 43 publications

Device Performance of Double-Gate Schottky-Barrier Graphene Nanoribbon Field-Effect Transistors with Physical Scaling

Device Performance of Double-Gate Schottky-Barrier Graphene Nanoribbon Field-Effect Transistors with Physical Scaling

Investigation of the role of defects on channel density profiles and their effect on the output characteristics of a nanowire FET

A review on transport characteristics and bio-sensing applications of silicene

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