In this paper, a low-temperature plasma-assisted process is developed to realize a uniform, ultraviolet (UV) transparent and chemically inert quartz-to-quartz direct bonding. Two sets of pretests are performed in order to understand how the bond surface energy changes with the plasma exposure time and the wet etching of quartz, respectively. The developed technique is used to fabricate a multilayered quartz template for UV nanoimprint lithography (UV-NIL). The multilayered quartz template is fabricated by bonding a square piece of a standard quartz wafer, which is about 625 μm in thickness, to a wet-etched 6.35 mm thick quartz photomask plate. A fabricated multilayered template is loaded to the commercial UV-NIL tool Imprio TM 100, and NIL was performed successfully. The developed direct bonding technique makes it possible for standard quartz wafers, which are compatible with high-resolution semiconductor fabrication processes, to be utilized as the templates in commercial UV-NIL machines with enhanced mechanical stability.
A compact partial H-plane filter consisting of quarter wavelength resonators is proposed. The previously proposed partial H-plane filter [1] has the same pass-band responses as those of conventional E-plane filter, while its cross section is one quarter. The proposed filter in this paper is designed by utilizing quarter wavelength resonator, so its total length is further reduced and its spurious responses are improved. The filter is fabricated with coax to partial H-plane waveguide transition in H-band. Measured results are in good agreement with computed results.
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