Minimization of residual layer thickness by using the optimized dispensing method in S-FILTM process

Kim, Ki-don; Jeong, Jun‐Ho; Sim, Young-suk; Lee, Eung-Sug

doi:10.1016/j.mee.2006.01.037

Cited by 22 publications

(7 citation statements)

References 3 publications

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“…In general, the thickness of residual layer left by the nanoimprint method is about 10−30 nm. 38,39 To study how temperature affects the selective growth of silver particles, newly prepared 3-MTS-treated films were heattreated between 400 and 600 °C. SEM images show that the formation of silver nanoparticles begin to appear on the film after 400 °C treatments (Figure 5a).…”

Section: Resultsmentioning

confidence: 99%

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Selective Growth of Silver Nanoparticle Arrays on Nanoimprinted Sol–Gel Silica Patterns

Chiu

Luo

2013

ACS Appl. Mater. Interfaces

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Selective growth of silver nanoparticles on ~100 nm thick silica patterns produced by nanoimprint method has been successfully demonstrated using either (1) thermo-induced reduction or (2) room temperature electroless deposition (ELD) without removing the ~25 nm thick residual layer left by nanoimprint process. This selectivity was achieved by silane additive, (3-mercaptopropyl)trimethoxysilane (3-MTS), which was added to the silica matrix to control nucleation and growth of silver. The presence of silver nanoparticles was confirmed by EDX and UV-vis spectrum, and the density, distribution, and size of silver particles were examined by atomic force microscopy (AFM) and scanning electron microscopy (SEM). Silica film heat-treated between 400 and 600 °C resulted in silver particles of 100-120 nm diameter with a linear density of 2.63-3.36 μm(-1), while the film treated by room temperature ELD produced silver particles of 67 nm diameter with a linear density of 5.65 μm(-1). The selective growth ratio based on particle density on pattern area versus residual layer is 12.92 and 20.31 for high- and room-temperature processes, respectively, whereas the samples without 3-MTS shows low selective growth ratio of 1.22 and 1.04. These results prove that both approaches are fast and effective, suggesting their potential to produce other type of nanoparticle arrays directly on nanoimprinted patterns.

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Section: Resultsmentioning

confidence: 99%

“…Thus, 3-MTS effectively limits the growth of silver only on the thick pattern area regardless of the presence of thin residual layer, which was confirmed to be ∼25 nm by AFM. In general, the thickness of residual layer left by the nanoimprint method is about 10–30 nm. , …”

Section: Resultsmentioning

confidence: 99%

Selective Growth of Silver Nanoparticle Arrays on Nanoimprinted Sol–Gel Silica Patterns

Chiu

Luo

2013

ACS Appl. Mater. Interfaces

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“…The drop-on-demand method offers a comprehensive and reliable solution to cope with the pattern density variations and eliminate the RL in a NanoImprint process (Kim et al 2006). However, this method is implemented in only specific NanoImprint techniques such as step and flash NanoImprint lithography.…”

Section: Optical Characterization Of Fabry-pérot Filter Arraysmentioning

confidence: 99%

Highly uniform residual layers for arrays of 3D nanoimprinted cavities in Fabry–Pérot-filter-array-based nanospectrometers

et al. 2015

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Miniaturized optical spectrometers can be implemented by an array of Fabry-Pérot (FP) filters. FP filters are composed of two highly reflecting parallel mirrors and a resonance cavity. Each filter transmits a small spectral band (filter line) depending on its individual cavity height. The optical nanospectrometer, a miniaturized FPbased spectrometer, implements 3D NanoImprint technology for the fabrication of multiple FP filter cavities in a single process step. However, it is challenging to avoid the dependency of residual layer (RL) thickness on the shape of the printed patterns in NanoImprint. Since in a nanospectrometer the filter cavities vary in height between neighboring FP filters and, thus, the volume of each cavity varies causing that the RL varies slightly or noticeably between different filters. This is one of the few disadvantages of NanoImprint using soft templates such as substrate conformal imprint lithography which is used in this paper. The advantages of large area soft templates can be revealed substantially if the problem of laterally inhomogeneous RLs can be avoided or reduced considerably. In the case of the nanospectrometer, non-uniform RLs lead to random variations in the designed cavity heights resulting in the shift of desired filter lines. To achieve highly uniform RLs, we report a volume-equalized template design with the lateral distribution of 64 different cavity heights into several units with each unit comprising four cavity heights. The average volume of each unit is kept constant to obtain uniform filling of imprint material per unit area. The imprint results, based on the volume-equalized template, demonstrate highly uniform RLs of 110 nm thickness.

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“…Air bubbles are able to dissolve in the liquid resist, but this might limit the speed of the global imprinting process. The bubble dissolution rate in the resist can be enhanced in special gas environments (small helium molecules [38] or carbon dioxide [39] dissolve well in organic materials). The use of pentafluoropropane, in which condensation starts when the gas pressure exceeds 0.15 MPa, was also demonstrated [40].…”

Section: Tools and Industrialization Issuesmentioning

confidence: 99%

Materials and Processes in UV‐Assisted Nanoimprint Lithography

Zelsmann

Boussey

2011

Generating Micro‐ and Nanopatterns on Polymeric Materials

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Minimization of residual layer thickness by using the optimized dispensing method in S-FILTM process

Cited by 22 publications

References 3 publications

Selective Growth of Silver Nanoparticle Arrays on Nanoimprinted Sol–Gel Silica Patterns

Selective Growth of Silver Nanoparticle Arrays on Nanoimprinted Sol–Gel Silica Patterns

Highly uniform residual layers for arrays of 3D nanoimprinted cavities in Fabry–Pérot-filter-array-based nanospectrometers

Materials and Processes in UV‐Assisted Nanoimprint Lithography

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