To improve the electrical and physical properties of as-deposited BSTZ thin films, the oxygen plasma treatment process were used by a low temperature treatment. In this study, the BSTZ thin films were post-treated under 150°C and 25 mTorr in the inductively coupled plasma. After oxygen plasma process treatment, the capacitance of thin films increased from 150 to 300pF in C-V curves, and the passivation of oxygen vacancy and defect in leakage current density curves were found. The influence of oxygen plasma on the chemical bonding state and crystalline structure was investigated by using XPS and XRD measurement.
BaTiO3/ which has good dielectric properties, they were widely used in ceramic capacitors, thermistors, etc. In this study, BaTiO3/ ceramics prepared by sol-gel powder, then mixed in the organic polymer polyether imide (PEI) and dispersant (surface active agents) and silane coupling agent (Silane Coupling Agent) of the composite material on flexible substrates, And analysis of its properties and electrical properties. Increase by a ceramic powder, to explore the impact of the substrate. In the physical analysis is used XRD, SEM to measure the intensity of crystalline phase and surface uniformity of the electrical measurement using HP4294 measuring dielectric constant and dielectric loss.
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