A balun-bandpass filter was proposed by using two folded open-loop ring resonators (OLRRs) to couple three microstrip lines. By tuning the size of the OLRR, the operating frequency of the balun-bandpass filter could be tuned to the needed value. By tuning the size of open stub at the end of microstrip lines, the balanced impedance of the balun-bandpass filter could also be tuned. The fabricated balun-bandpass filter had a wide bandwidth and a low insertion loss at center frequency of the passband. The balunbandpass filter presented an excellent in-band balanced performance with common-mode rejection ratio more than 20 dB in the passbands. An advanced design methodology had been adopted based on EM simulation for making these designed parameters of OLRRs and microstrip lines. Good correlation was seen between simulation and measurement, and the result was that first run pass had been achieved in the majority of our designs.
A two-step electrochemical anodization was used to form the anodic aluminum oxide (AAO) thin films with nanotube arrays of self-organized honeycomb structure. Al foil was anodized in 10% sulfuric acid (H2SO4) and 3% oxalic acid (H2C2O4) at 25°C at constant voltage of 40 V for 60 min for two times. Ethylene glycol (C2H6O2) was used as a solution and 0.3 M potassium iodide (KI) was used to improve the solution’s conductivity. Different electrolyte concentrations of Bi(NO3)3-5H2O, SbCl3, and TeCl4were added into KI-C2H6O2solution and the cyclic voltammetry experiment was used to find the reduced voltages of Bi3+, Sb3+, and Te4+ions. The potentiostatic deposition and pulse electrodeposition (PED) processes were used to deposit the (Bi,Sb)2−xTe3+x-based materials. Field-emission scanning electron microscope and energy dispersive spectrometers were used to analyze the compositions of the deposited (Bi,Sb)2−xTe3+x-based materials. After finding the optimal deposition parameter of the PED process the AAO nanotube arrays were used as the templates to deposit the (Bi,Sb)2−xTe3+x-based thermoelectric nanowires.
BaTiO3/ which has good dielectric properties, they were widely used in ceramic capacitors, thermistors, etc. In this study, BaTiO3/ ceramics prepared by sol-gel powder, then mixed in the organic polymer polyether imide (PEI) and dispersant (surface active agents) and silane coupling agent (Silane Coupling Agent) of the composite material on flexible substrates, And analysis of its properties and electrical properties. Increase by a ceramic powder, to explore the impact of the substrate. In the physical analysis is used XRD, SEM to measure the intensity of crystalline phase and surface uniformity of the electrical measurement using HP4294 measuring dielectric constant and dielectric loss.
0.65(K0.5Bi0.5)TiO3–0.35BaTiO3 (0.65 KBT-0.35 BT3) ceramic was synthesized using a conventional calcination process (CC-process), and using a two-step calcination process that combined hydrothermal and CC processes (HT-CC-process). The effects of these two different calcination processes on the physical and dielectric properties of 0.65 KBT-0.35 BT3 ceramics were recorded and analyzed. When the CC-process was used, secondary phases—namely, BaBi4Ti4O15, K2TiO3, and K4Ti3O8—were observed in the XRD patterns of 0.65 KBT-0.35 BT3 ceramics. When the HT-CC-process was used, only the (K0.5Bi0.5)TiO3 (or (K0.5Bi0.5, Ba)TiO3) phase was observed in the XRD patterns, with no secondary phases. Due to the secondary phases, the CC-process 0.65 KBT-0.35 BT3 ceramic had lower dielectric peaks and broader temperature-dielectric constant curve than the 0.65 KBT-0.35 BT3 ceramic synthesized using the HT-CC-process.
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