In this study, the Mo-electrode thin films were deposited by a two-stepped process, and the high-purity copper indium selenide-based powder (CuInSe2, CIS) was fabricated by hydrothermal process by Nanowin Technology Co. Ltd. From the X-ray pattern of the CIS precursor, the mainly crystalline phase was CIS, and the almost undetectable CuSe phase was observed. Because the CIS powder was aggregated into micro-scale particles and the average particle sizes were approximately 3 to 8 μm, the CIS power was ground into nano-scale particles, then the 6 wt.% CIS particles were dispersed into isopropyl alcohol to get the solution for spray coating method. Then, 0.1 ml CIS solution was sprayed on the 20 mm × 10 mm Mo/glass substrates, and the heat treatment for the nano-scale CIS solution under various parameters was carried out in a selenization furnace. The annealing temperature was set at 550°C, and the annealing time was changed from 5 to 30 min, without extra Se content was added in the furnace. The influences of annealing time on the densification, crystallization, resistivity (ρ), hall mobility (μ), and carrier concentration of the CIS absorber layers were well investigated in this study.

A self-powered complementary electrochromic device (CECD) driven by a high open-circuit voltage InGaN/GaN multiple quantum well (MQW) solar cell has been designed. The coloration and bleaching time of the system were 5 and 8 s, respectively.

In this study, a p-type 2 at% lithium-doped nickel oxide (abbreviation L2NiO) solution was prepared using Ni(NO3)2·6H2O, and LiNO3·L2NiO thin films were deposited using an atomizer by spraying the L2NiO solution onto a glass substrate. The sprayed specimen was heated at a low temperature (140 °C) and annealed at different high temperatures and times. This method can reduce the evaporation ratio of the L2NiO solution, affording high-order nucleating points on the substrate. The L2NiO thin films were characterized by X-ray diffraction, scanning electron microscopy, UV–visible spectroscopy, and electrical properties. The figure of merit (FOM) for L2NiO thin films was calculated by Haacke’s formula, and the maximum value was found to be 5.3 × 10−6 Ω−1. FOM results revealed that the L2NiO thin films annealed at 600 °C for 3 h exhibited satisfactory optical and electrical characteristics for photoelectric device applications. Finally, a transparent heterojunction diode was successfully prepared using the L2NiO/indium tin oxide (ITO) structure. The current–voltage characteristics revealed that the transparent heterojunction diode exhibited rectifying properties, with a turn-on voltage of 1.04 V, a leakage current of 1.09 × 10−4 A/cm2 (at 1.1 V), and an ideality factor of n = 0.46.

A 0?95(Na 0?5 Bi 0?5 )TiO 3 -0?05BaTiO 3 z1 wt-%Bi 2 O 3 (NBT-BT3) ceramic was used as target to deposit the NBT-BT3 thin films. The excess 1 wt-%Bi 2 O 3 was used to compensate the vapourisation of Bi 2 O 3 during the depositing processes. The optimal deposition parameters were substrate temperature of 500uC, radio frequency power of 100 W, chamber pressure of 10 mtorr and oxygen concentration of 40%. Rapid thermal annealing treated processes were carried out on NBT-BT3 thin films from 600 to 800uC in ambient or in oxygen atmosphere for 1 min. The surface morphologies and thicknesses of NBT-BT3 thin films were characterised by field emission scanning electron microscopy, and the thickness was ,216 nm. It would be shown that the NBT-BT3 thin films annealed in oxygen atmosphere had the smaller grain size, larger memory window, smaller leakage current density, larger remanent and saturation polarisation and smaller coercive field than the NBT-BT3 thin films annealed in ambient atmosphere.