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We report on a highly compact, one diode-one resistor (1D-1R) nanopillar device architecture for SiOx-based ReRAM fabricated using nanosphere lithography (NSL). The intrinsic SiOx-based resistive switching element and Si diode are self-aligned on an epitaxial silicon wafer using NSL and a deep-Si-etch process without conventional photolithography. AC-pulse response in 50 ns regime, multibit operation, and good reliability are demonstrated. The NSL process provides a fast and economical approach to large-scale patterning of high-density 1D-1R ReRAM with good potential for use in future applications.

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The switching layer with Si interfusion is investigated to improve the electrical characteristics of WOX resistance random access memory (RRAM). The WOX has attracted extensive attention for RRAM because it can form by converting the surface of the W-plug with a current complementary metal oxide semiconductor (CMOS) compatible thermal oxidation process. In general, the resistance switching behavior of WOX-RRAM devices is unstable because the diverse oxidation state provided the stochastic conduction paths. In this research, the Si interfusion can effectively localize the filament conduction path in WOX resistance switching layer because the tungsten filament path is limited by SiOX in the WSiOX film during the forming process.

In situ real-time monitoring of profile evolution during plasma etching of mesoporous low-dielectric-constant SiO 2Patterning of fluorine-, hydrogen-, and carbon-containing SiO 2 -like low dielectric constant materials in highdensity fluorocarbon plasmas: Comparison with SiO 2 O 2 plasma ashing is commonly used to remove photoresist. The effect of O 2 plasma ashing on the porous organosilicate glass (CH 3 SiO 1.5 ) n , one of the spin-on materials, is investigated. O 2 plasma can oxidize the methyl groups in porous organosilicate glass ͑POSG͒, which leads to the formation of Si-OH groups. The hydrophilic Si-OH groups will induce moisture uptake so that electrical degradation will occur in POSG film. Pure hexamethyldisilazane ͑HMDS͒ vapor ͑100% HMDS͒ can react with the Si-OH groups in POSG film. It converts hydrophilic Si-OH groups into hydrophobic Si-O-Si(CH 3 ) 3 groups against moisture uptake. The leakage current density decreases by a factor of 2-3 and the dielectric constant decreases from 3.62 to 2.4 when O 2 plasma-damaged POSG undergoes HMDS treatment at 80°C for 15 min. Therefore, HMDS treatment is the effective technique to repair the electrical degradation to POSG film during photoresist stripping processing.