Gate-All-Around Junctionless Transistors With Heavily Doped Polysilicon Nanowire Channels

Su, Chun-Jung; Tsai, Tzu-I; Liou, Yu-Ling; Lin, Zer-Ming; Lin, Horng−Chih; Chao, Tien−Sheng

doi:10.1109/led.2011.2107498

Cited by 167 publications

(81 citation statements)

References 11 publications

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“…The average variation of I off in JNTs is about 2.8 times of that in IMFETs. With the increase of NUC variation, carriers in the channel of JNTs greatly increase due to its higher doping concentration [11]. Meanwhile, the electric field at the center of the channel also weaken since the workfunction of gate dielectric is constant, which causes the channel not fully depleted and hence I off increased.…”

Section: Resultsmentioning

confidence: 99%

Investigations of junctionless nanowire transistors with non-uniform channel

Zhu

Lou

et al. 2012

2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology

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In this paper, the effects of non-uniform channel (NUC) in junctionless nanowire transistors (JNTs) are investigated and compared with those in inversion-mode field effect transistors (IMFETs) using three-dimensional simulations. The results show that, the variation of threshold voltage V t in JNTs is 1.7 times of that in IMFETs and the fluctuation of off-state current I off is 2.8 times, which is mainly because that JNTs have bulk conduction channels and higher doping concentration in the channels. Hence, the process fluctuation for JNTs must be 30% or even smaller of that for IMFETs for similar performance variation. Furthermore, we conclude a formula based on the results to limit the variation of channel width.

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Section: Resultsmentioning

confidence: 99%

Investigations of junctionless nanowire transistors with non-uniform channel

Zhu

Lou

et al. 2012

2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology

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“…With USAFM, the possibility of imaging objects below the surface of a sample has been shown [10][11][12]14]. Such subsurface imaging capabilities are of great interest in several fields, such as semiconductors [15], life sciences [16], and measurements of local mechanical properties [17].…”

confidence: 99%

Analysis of contact stiffness in ultrasound atomic force microscopy: three-dimensional time-dependent ultrasound modeling

Piras

Sadeghian

2017

J. Phys. D: Appl. Phys.

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Ultrasound Atomic Force Microscopy (US-AFM) has been used for subsurface imaging of nanostructures. The contact stiffness variations have been suggested as the origin of the image contrast.Therefore, to analyze the image contrast, the local changes in the contact stiffness due to the presence of subsurface features should be calculated. So far, only static simulations have been conducted to analyze the local changes in the contact stiffness and, consequently, the contrast in US-AFM. Such a static approach does not fully represent the real US-AFM experiment, where an ultrasound wave is launched either into the sample or at the tip, which modulates the contact stiffness. This is a time-dependent nonlinear dynamic problem rather than a static and stationary one. This letter presents dynamic 3D ultrasound analysis of contact stiffness in US-AFM (in contrast to static analysis) to realistically predict the changes in contact stiffness and thus the changes in the subsurface image contrast. The modulation frequency also influences the contact stiffness variations and, thus, the image contrast. The three-dimensional time-dependent ultrasound analysis will greatly aid in the contrast optimization of subsurface nano-imaging with US-AFM.

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“…Low resistivity epi-like Si channel in the order of 10 -3 Ω-cm (Fig. 12), which is suitable for JL devices [9], can be achieved by optimizing laser anneal process. The fabricated n-type JL device has transfer characteristics of SS=190 mV/dec., I on =6 μA/μm, and I on /I off ratio >10 5 operated at V d =V b =1V (Fig.…”

Section: (B) Metal Back Gate Effectmentioning

confidence: 99%

“…-situ doping (high) B in-situ doping (low) As (im plantation) Resistivities of the implanted and in-situ doped epi-like Si films by laser activation and are compared with ref[9].…”

mentioning

confidence: 99%

Record-high 121/62 μA/μm on-currents 3D stacked epi-like Si FETs with and without metal back gate

Yang

Chen

Shieh

et al. 2013

2013 IEEE International Electron Devices Meeting

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A sequential layered integration technology that can fabricate 3D stackable epi-like Si FETs with and without metal back gate (MBG) under sub-400 o C are proposed in this article. With laser crystallized epi-like Si and CMP thinning processes for channel fabrication, 3D stackable ultra thin body (UTB) n/p-MOSFETs with low-subthreshold swings (88 and 121 mV/dec.) and high on-currents (121 and 62 μA/μm) are demonstrated. With additional metal back gate structure, UTB devices can be desirably operated in a positive or negative threshold voltage range with γ values of 0.51 (n-MOSFETs) and 0.56 (p-MOSFETs) for favoring its applications in 3D logic circuits. In addition, such thin and high quality channel and metal back gate scheme is not only promising for conventional p-n junction device but also junctionless (JL) scheme, which can simplify the fabrication and achieve further scaling.

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Gate-All-Around Junctionless Transistors With Heavily Doped Polysilicon Nanowire Channels

Cited by 167 publications

References 11 publications

Investigations of junctionless nanowire transistors with non-uniform channel

Investigations of junctionless nanowire transistors with non-uniform channel

Analysis of contact stiffness in ultrasound atomic force microscopy: three-dimensional time-dependent ultrasound modeling

Record-high 121/62 μA/μm on-currents 3D stacked epi-like Si FETs with and without metal back gate

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Gate-All-Around Junctionless Transistors With Heavily Doped Polysilicon Nanowire Channels

Cited by 167 publications

References 11 publications

Investigations of junctionless nanowire transistors with non-uniform channel

Investigations of junctionless nanowire transistors with non-uniform channel

Analysis of contact stiffness in ultrasound atomic force microscopy: three-dimensional time-dependent ultrasound modeling

Record-high 121/62 &#x03BC;A/&#x03BC;m on-currents 3D stacked epi-like Si FETs with and without metal back gate

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Product

Resources

About

Record-high 121/62 μA/μm on-currents 3D stacked epi-like Si FETs with and without metal back gate