Improvement on Oxygen Vacancies Effect of High Dielectric Constant (Ba_0.7Sr_0.3)(Ti_0.9Zr_0.1)O₃ Thin Films Using by Plasma Treatment

Abstract

To improve the electrical and physical properties of as-deposited BSTZ thin films, the oxygen plasma treatment process were used by a low temperature treatment. In this study, the BSTZ thin films were post-treated under 150°C and 25 mTorr in the inductively coupled plasma. After oxygen plasma process treatment, the capacitance of thin films increased from 150 to 300pF in C-V curves, and the passivation of oxygen vacancy and defect in leakage current density curves were found. The influence of oxygen plasma on the chemical bonding state and crystalline structure was investigated by using XPS and XRD measurement.

Bipolar Switching Characteristics of RRAM Cells with CaBi4Ti4O15Film

“…Several perovskite materials, such as SrBi 4 Ti 4 O 15 (SBT) [10], (Ba 0.7 Sr 0.3 )(Ti 0.9 Zr 0.1 )O 3 [11], CaBi 4 Ti 4 O 15 (CBT) [12,13], CaBi 4−x Nd x Ti 4 O 15 (CBNT) [14], and Ca 1−x La x Bi 4 (Ti 0.9 W 0.1 ) 4 O 15 (CLBTW) [15], have been developed and investigated recently. Especially, the CBT film has high Curie temperature and low current density [16,17].…”

Ultraviolet assisted processing: A unique approach to mitigate oxygen vacancies and attain low loss highly tunable Ba0.60Sr0.40TiO3 thin films

“…and/or low loss pyrochlore (BZN) films, 16,[19][20][21] and tuning of growth and/or post deposition crystallization ambience/temperatures. [22][23][24][25] Although these methods have been fairly successful at reducing dielectric loss, this property enhancement has often been accomplished at the expense of degrading other required properties (tunability, insulation requirements etc. ), added complexity and/or film process processing steps which are often not CMOS compatible.…”