To improve the electrical and physical properties of as-deposited BSTZ thin films, the oxygen plasma treatment process were used by a low temperature treatment. In this study, the BSTZ thin films were post-treated under 150°C and 25 mTorr in the inductively coupled plasma. After oxygen plasma process treatment, the capacitance of thin films increased from 150 to 300pF in C-V curves, and the passivation of oxygen vacancy and defect in leakage current density curves were found. The influence of oxygen plasma on the chemical bonding state and crystalline structure was investigated by using XPS and XRD measurement.
In this study, thin films of CaBi4Ti4O15with preferential crystal orientation were prepared by the chemical solution deposition (CSD) technique on a SiO2/Si substrate. The films consisted of a crystalline phase of bismuth-layer-structured dielectric. The as-deposited CaBi4Ti4O15thin films were crystallized in a conventional furnace annealing (RTA) under the temperature of 700 to 800°C for 1min. Structural and morphological characterization of the CBT thin films were investigated by X-ray diffraction (XRD) and field-emission scanning electron microscope (FE-SEM). The impedance analyzer HP4294A and HP4156C semiconductor parameters analyzer were used to measurement capacitance voltage (C-V) characteristics and leakage current density of electric field (J-E) characteristics by metal-ferroelectric-insulator- semiconductor (MFIS) structure. By the experimental result the CBT thin film in electrical field 20V, annealing temperature in 750°C the CBT thin film leaks the electric current is 1.88x10-7A/cm2and the memory window is 1.2V. In addition, we found the strongest (119) peak of as-deposited thin films as the annealed temperature of 750°C
In this study, we investigated that of Al/ Ba(Zr0.1Ti0.9)O3(BZT)/Pt/Ti/SiO2/Silicon metal-ferroelectric-metal-insulator-semiconductor (MFM) ferroelectric structures and found the memory effect and capacitance of annealed BZT films during the different annealing temperature. Additionally, the capacitance and leakage current density were about 4.3 nF and 1´10-6A/cm2, respectively. From C-V curves, the ferroelectric properties and charges accumulation of annealed BZT films were also found during the annealing temperature of 700°C.
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