Low switching-threshold-voltage zinc oxide nanowire array resistive random access memory

Shen, Guan Hung; Tandio, Andrew Ronaldi; Mei, Lin; Lin, Gao Feng; Chen, Kai Huang; Hong, Franklin Chau‐Nan

doi:10.1016/j.tsf.2016.04.027

Cited by 9 publications

(7 citation statements)

References 35 publications

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“…[263] Also in case of ZnO NW arrays, each NW can be considered as a switching device as reported by Dugaiczyk et al [264] In this work, vertically aligned ZnO NWs were grown by CVD on a Cu substrate that acted also as the bottom electrode, while an Au coated AFM tip was used as the top electrode allowing to make a contact to the top of a single NW. Similarly, ZnO NW arrays embedded in insulating photoresist [248] and in poly 4-vinyl phenol [260] were reported to exhibit resistive switching behavior. When a strong electric field is applied, oxygen vacancies are proposed to align together and form a conductive filament between the two electrodes, while the RESET occurs when the conductive path is destroyed by Joule heating.…”

Section: Wwwadvelectronicmatdementioning

confidence: 97%

“…Bipolar resistive switching was observed, with an endurance of 200 cycles. Similarly, ZnO NW arrays embedded in insulating photoresist and in poly 4‐vinyl phenol were reported to exhibit resistive switching behavior. In all these works, the polymer embedding was proposed to avoid short circuits between top and bottom electrodes and was supposed not to be actively involved in the resistive switching mechanism that was mainly attributed to the NWs.…”

Section: Resistive Switching In Nanowire and Nanorod Arraysmentioning

confidence: 97%

“…Among NW and NR arrays, resistive switching in ZnO nanostructures is the most widely investigated [164,186,[243][244][245][246][247][248][249][250][251][252][253][254][255][256][257][258][259][260] because of the relatively easy synthesis of these structures. [261,262] Before the first experimental observation of resistive switching in a single isolated ZnO NW, Chang et al [243] first reported in 2010 resistive switching behavior in ZnO NR layer.…”

Section: Wwwadvelectronicmatdementioning

confidence: 99%

See 2 more Smart Citations

Recent Developments and Perspectives for Memristive Devices Based on Metal Oxide Nanowires

Milano

Porro

Valov

et al. 2019

Adv Elect Materials

105

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Memristive devices are considered one of the most promising candidates to overcome technological limitations for realizing next‐generation memories, logic applications, and neuromorphic systems in the modern nanoelectronics and information technology. Despite the continuous efforts, understanding the resistive switching mechanism underlying memristive/neuromorphic behavior still represents a challenge. Metal oxide nanowire‐based memristors appear suitable model systems for a deeper understanding of the involved physical/chemical phenomena due the possibility for localizing and investigating the switching mechanism. In practical aspects, nanowire‐based devices can be grown using a bottom‐up approach, thus being considered reliable candidates for going beyond the current scaling limitations of the top‐down approach by the standard lithography. In addition, taking into advantage of the high surface‐to‐volume ratio of these nanostructures, new device functionalities can be achieved by exploiting surface effects. In the literature, a variety of nanowire‐based devices such as single nanowires, nanowire arrays, and networks are reported to exhibit memristive behavior, explained by different switching mechanisms. This work provides a comparative review and a comprehensive analysis of device performances and physical phenomena responsible for memristive and neuromorphic behavior in such nanostructures. The analysis of the state‐of‐art of memristor devices based on nanowires and nanorods represent a milestone toward the development of nanowire‐based artificial neural networks.

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Section: Wwwadvelectronicmatdementioning

confidence: 97%

Section: Resistive Switching In Nanowire and Nanorod Arraysmentioning

confidence: 97%

Section: Wwwadvelectronicmatdementioning

confidence: 99%

See 1 more Smart Citation

Recent Developments and Perspectives for Memristive Devices Based on Metal Oxide Nanowires

Milano

Porro

Valov

et al. 2019

Adv Elect Materials

105

View full text Add to dashboard Cite

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“…Shen et al proposed a ZnO NW device with low switching threshold voltage. [ 111 ] Self‐compliance and self‐rectifying behaviors have been realized in Ga‐doped and Sb‐doped ZnO single‐NW devices, as shown in Figure 3e. [ 103 ] Dong et al proposed a Cu/Zn 2 SnO 4 NW/Pd device with an ultrafast response speed (20 ns).…”

Section: Rs Device and Performance Improvementmentioning

confidence: 99%

A Review of Resistive Switching Devices: Performance Improvement, Characterization, and Applications

et al. 2021

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As human society enters the big data era, huge data storage and energy‐efficient data processing are in great demand. The resistive switching device is an emerging device with both inherent memory and computation capabilities. It may bring disruptive influences to modern information technology from bottom up. After decades of study of the materials, mechanisms, and devices, the maturity of the resistive switching device in various applications, for example, nonvolatile memory, artificial neural networks, and information security, could be foreseen. Herein, the recent progress of the resistive switching device from the aspects of materials, devices, and applications is reviewed. First, the resistive switching device, including mechanisms and materials, is briefly discussed. Performance improvement methods with respect to individual device properties are systematically illustrated. Second, characterization technologies for understanding the mechanism and guidance of device design are classified and discussed in depth. Third, various applications based on resistive switching devices are summarized. The review ends with a brief conclusion concerning the challenges from mechanism to algorithm level and the future outlook.

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“…In this work, bipolar resistive switching and forming-free MZN NR memory devices were prepared by hydrothermal method. This method has attracted considerable attention due to its simple procedure, low cost, low temperature, high yield, and controllable process [15][16][17]. MZN NRs can control oxygen vacancy distribution because injected electrons will be trapped by uniform ionized oxygen vacancies distributed on the MZN NR sidewall.…”

Section: Introductionmentioning

confidence: 99%

Resistive Switching Behavior of Magnesium Zirconia Nickel Nanorods

Lee

Wang

et al. 2020

Materials

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To effectively improve the uniformity of switching behavior in resistive switching devices, this study developed magnesium zirconia nickel (MZN) nanorods grown on ITO electrodes through hydrothermal method. The field emission scanning electron microscope image shows the NR formation. Al/MZN NR/ITO structure exhibits forming-free and bipolar resistive switching behaviors. MZN NRs have relatively higher ON/OFF ratio and better uniformity compared with MZN thin film. The superior properties of MZN NRs can be attributed to its distinct geometry, which leads to the formation of straight and extensible conducting filaments along the direction of MZN NR. The results suggest the possibility of developing sol–gel NR-based resistive memory devices.

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Low switching-threshold-voltage zinc oxide nanowire array resistive random access memory

Cited by 9 publications

References 35 publications

Recent Developments and Perspectives for Memristive Devices Based on Metal Oxide Nanowires

Recent Developments and Perspectives for Memristive Devices Based on Metal Oxide Nanowires

A Review of Resistive Switching Devices: Performance Improvement, Characterization, and Applications

Resistive Switching Behavior of Magnesium Zirconia Nickel Nanorods

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