We have fabricated and investigated the bipolar resistive switching characteristics of Pt/rutile-TiO2∕TiN devices for resistance memory applications. Data writing for five-level resistance states has been demonstrated by varying the amplitude of 5ns voltage pulses. In addition, data retention of more than 256h at 85°C and an excellent endurance of over 2×106cycles have been confirmed. These results indicate that Pt∕TiO2∕TiN devices have a potential for nonvolatile multiple-valued memory devices.
Forming gas (3%H2+97%N2) anneals result in decomposition of SrRuO3 and increase the leakage current of the SrRuO3/(Ba, Sr)TiO3/SrRuO3 capacitor. However, we show that 0.5% O2 addition to the forming gas (3%H2+0.5%O2+96.5%N2) does not cause degradation of the SrRuO3/(Ba, Sr)TiO3/SrRuO3 capacitor, and can also enhance the performance of the transistor effectively. To correctly study the effect of a forming gas anneal on the SrRuO3/(Ba, Sr)TiO3/SrRuO3 capacitor, efforts should be made to avoid the possible O2 diffusion from air into furnace.
Low femperature (600°C) (Ba, Sr)Ti03 (BST) capacitor process integration (LTB) based on SrRu03 (SRO) electrode is proposed to achieve gigabit scaled and embedded DRAMs. BST crystallizing temperature is successfully reduced by SRO, which has the same perovskite structure as BST film. Chemical Mechanical polishing (CMP) and O3 water etching are developed for a storage node (SN) electrode and a plate (PL) electrode patterning. A new low temperature post anneal method is also proposed in order to reduce oxygen vacancies at a top electrode-BST interface.
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