SrRuO
                  3
                /(Ba, Sr)TiO
                  3
                /SrRuO
                  3
           capacitor annealed in the forming gas with and without oxygen addition

Lin, Jun; Natori, Kenji; Fukuzumi, Y.; Izuha, Mitsuaki; Tsunoda, K.; Eguchi, Kazuhiro; Hieda, K.; Matsunaga, Daisuke

doi:10.1063/1.126366

Cited by 20 publications

(12 citation statements)

References 24 publications

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“…6͑c͔͒ shifts the temperature of this process to about 450°C but the amount of 12.9% of lost substance is exactly the same. During annealing SrRuO 3 decomposed completely following the reaction proposed by Lin et al 40 ͑SrRuO 3 +2H 2 → Ru+ SrO + 2H 2 O͒. The value of 14.8%, calculated for the full chemical reaction and taking into account 20% RuO 2 excess, slightly differed from the experimental value.…”

Section: -2contrasting

confidence: 43%

Surface layer of SrRuO3 epitaxial thin films under oxidizing and reducing conditions

Młynarczyk

Szot

Petraru

et al. 2007

Journal of Applied Physics

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Imperfect stoichiometry and heterogeneity of a surface layer of SrRuO3 epitaxial thin films, grown on SrTiO3 substrates, are presented with the help of various methods. Rutherford backscattering spectroscopy, x-ray photoemission spectroscopy (XPS), and time of flight secondary ion mass spectrometry are used to obtain information about the stoichiometry and uniformity of the SrRuO3 structure. The temperature of chemical decomposition is first determined for polycrystalline samples under different conditions using thermogravimetry analysis. Then the determined values are used for thin film annealings in high and low oxygen pressure ambients, namely, air, vacuum, and hydrogen. The surface deterioration of the thin film together with changes in its electronic structure is investigated. O1s and Sr3d core lines measured by XPS for as-made samples obviously consist of multiple components indicating different chemical surroundings of atoms. Thanks to different incident beam angle measurements it is possible to distinguish between interior and surface components. Valence band spectra of the interior of the film are consistent with theoretical calculations. After annealing, the ratio of the different components changes drastically. Stoichiometry near the surface changes, mostly due to ruthenium loss (RuOX) or a segregation process. The width and position of the Ru3p line for as-made samples suggest a mixed oxidation state from metallic to fully oxidized. Long annealing in hydrogen or vacuum ambient leads to a complete reduction of ruthenium to the metallic state. Local conductivity atomic force microscopy scans reveal the presence of nonconductive adsorbates incorporated in the surface region of the film. Charge transport in these measurements shows a tunneling character. Scanning tunneling microscopy scans show some loose and mobile adsorbates on the surface, likely containing hydroxyls. These results suggest that an adequate description of a SrRuO3 thin film should take into account imperfections and high reactivity of its surface region.

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Section: -2contrasting

confidence: 43%

Surface layer of SrRuO3 epitaxial thin films under oxidizing and reducing conditions

Młynarczyk

Szot

Petraru

et al. 2007

Journal of Applied Physics

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“…8 In those cases, adding 0.5% of oxygen to the forming gas can prevent the decomposition of SrRuO 3 that would normally occur when exposed to pure forming gas at 400°C for 1 h. Halley et al also reported that while the addition of 1%-2% O 2 to forming gas prevented decomposition even at temperatures as high as 700°C, heating in vacuum (10 Ϫ4 Torr) caused the decomposition of SrRuO 3 to occur around 600°C. 8 In those cases, adding 0.5% of oxygen to the forming gas can prevent the decomposition of SrRuO 3 that would normally occur when exposed to pure forming gas at 400°C for 1 h. Halley et al also reported that while the addition of 1%-2% O 2 to forming gas prevented decomposition even at temperatures as high as 700°C, heating in vacuum (10 Ϫ4 Torr) caused the decomposition of SrRuO 3 to occur around 600°C.…”

mentioning

confidence: 99%

Thermal stability of epitaxial SrRuO3 films as a function of oxygen pressure

Lee

Christen

Chisholm

et al. 2004

Applied Physics Letters

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“…It is interpreted as a built-up interface potential induced by the hydrogen and in turn the lowering of the Schottky barrier height [26,27]. Several consistent results and mechanisms have been published by NEC [30][31][32][33], Fujitsu [34,35], Hyundai [36,37], Argonne National Laboratory [38][39][40], etc. Meanwhile, several technical routines have been proposed to avoid such hydrogen damage in actual LSI/ULSI fabrication processes [31,32,35,36,[41][42][43].…”

Section: Introductionmentioning

confidence: 65%

Hydrogen-Sensitive Amorphous Ferroelectric Thin Film Capacitive Devices

Zhu

Chen

Tan

et al. 2002

Integrated Ferroelectrics

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Amorphous ferroelectric thin film capacitive gas sensors with a largely improved sensitivity to hydrogen have been developed recently, showing a great promising potential for the next generation hydrogen detection technology. This review presents an overall picture of amorphous ferroelectric thin film hydrogen gas sensors, starting from the hydrogen-damage phenomena of ferroelectric thin films during the forming gas annealing (FGA) process. It stresses on the correlation among processing, microstructural evolution and electric properties of amorphous ferroelectric thin films for fabrication concerns. An attempt is made to detail the hydrogen sensitivity and transient response of various prototype capacitive devices with respect to the instinct of the films and the hydrogen kinetic processes in the Pd/ferroelectric heterostructure. Recent advances on the hydrogen-damage mechanism of ferroelectric thin films and the hydrogen interface-blocking model for amorphous ferroelectric gas sensors are also described.

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SrRuO 3 /(Ba, Sr)TiO 3 /SrRuO 3 capacitor annealed in the forming gas with and without oxygen addition

Cited by 20 publications

References 24 publications

Surface layer of SrRuO3 epitaxial thin films under oxidizing and reducing conditions

Surface layer of SrRuO3 epitaxial thin films under oxidizing and reducing conditions

Thermal stability of epitaxial SrRuO3 films as a function of oxygen pressure

Hydrogen-Sensitive Amorphous Ferroelectric Thin Film Capacitive Devices

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