Experiments on ultra-small metal-oxide-semiconductor field effect transistors (MOSFETs) less than 100 nm have been widely reported recently. The frequency of carrier scattering events in these ultra-small devices is diminished, so that further suppression of carrier scattering may bring these devices close to the regime of ballistic transport. Carrier scattering is suppressed by constructing their channel regions with intrinsic Si and also by low temperature operation. This article proposes the ballistic transport of carriers in MOSFETs, and presents the current-voltage characteristics of the ballistic n-channel MOSFET. The current is expressed with the elementary parameters without depending on the carrier mobility. It is independent of the channel length and is proportional to the channel width. The current value saturates as the drain voltage is increased and the triode and the pentode operation are specified as in the conventional MOSFET. Similar current-voltage characteristics in the ballistic transport regime are also investigated for the p-channel MOSFET, the dual gate ultra-thin silicon on insulator MOSFET, and the high electron mobility transistor device. The obtained current gives the maximum current limitation of each field effect transistor geometry. The current control mechanism of ballistic MOSFETs is discussed. The current value is governed by the product of the carrier density near the source edge in the channel, and the velocity with which carriers are injected from the source into the channel.
Influence of optical phonon emission to the transport is discussed. It is suggested that if the device is operated with relatively low carrier density at low temperatures, and if the scattering processes other than the optical phonon emission are suppressed so as to attain the ballistic transport, the optical phonon emission is also suppressed and ballistic transport is sustained. A convenient figure of merit to show the ballisticity of carrier transport in an experimental MOSFET is proposed. Its value is estimated for some examples of the recent ultra-small MOSFET experiment. The proposed current voltage characteristics are evaluated for a dual gate silicon on insulator MOSFET geometry. The result is compared with the recently reported elaborate Monte Carlo simulation with satisfactory agreement.
The static value of the effective dielectric constant in a thin film capacitor is simulated by means of the local field theory. The value of it shows a sharp decrease as the film thickness is decreased in an ultrathin film geometry. This phenomenon is due to the size effect intrinsic to a thin film structure and has nothing to do with the material aspect. The decrease is more remarkable for larger values of the bulk dielectric constant. It is recovered by inserting interface layers with larger atomic polarizability between the film and the capacitor electrode.
In a research field of network-based control systems (NBCSs), the time delay problem is one of the most significant is- sues. Efficient stabilization methods of time delayed control sys- tems enable NBCSs to be flexibly applied to many kinds of situa- tions. A novel time delay compensation method based on the con- cept of network disturbance (ND) and communication disturbance observer (CDOB) has been proposed. The compensation method has the same effectiveness as that of the Smith predictor. In addi- tion, since the method is simple and does not need time delay model or time delay measurement, it can be easily implemented to various applications. However, the design method has not been concerned so far. This paper therefore presents stability analysis and studies a practical design procedure of the time delayed control systems with CDOB. At first, the concept of ND is introduced and the validity of the time delay compensation method is described. Then an analysis about the effects of parameters in control systems on stability is conducted. Characteristics of the effects of parameters on stability come out. Then we study a practical design procedure of the time delayed control systems. The validity of the design procedure is val- idated by experimental results. In the experiment, we also verify the performance of the system in the case of time-varying delay. Finally, comparative study of the method to the Smith predictor is presented
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