High speed resistive switching in Pt∕TiO2∕TiN film for nonvolatile memory application

Yoshida, Chikako; Tsunoda, K.; Noshiro, Hideyuki; Sugiyama, Yoshihiro

doi:10.1063/1.2818691

Cited by 267 publications

(174 citation statements)

References 7 publications

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“…The V th value of the sample oxidized at 400 o C was around 1.8 V, and RS was hard to be observed probably because the oxide layer was too thin for the measurement using the probe-type top electrode. By increasing the oxidation temperature to 500 o C, V th was between 2 and 3 V. Coexistence of the monopolar and the bipolar switching was recognized within one sample as reported in earlier works on binary metal oxides [30][31][32][33][34][35][36][37], although the condition (e.g. current compliance value and maximum voltage to be applied) to realize RS with high probability is still obscure in detail.…”

Section: Reram Switching Propertymentioning

confidence: 62%

Resistance switching properties of molybdenum oxide films

et al. 2012

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Resistive random access memory (ReRAM) properties in which the resistance of the insulating material drastically changes by voltage application have recently attracted much attention. In this work, molybdenum oxide prepared by thermal oxidation of Mo films was studied to investigate its potential as a material exhibiting ReRAM switching. The samples oxidized between 400 and 600 o C were composed of MoO 3 and were switchable. Current-to-voltage curves, which were measured in air at room temperature by using a Pt-Ir probe as the top electrode, indicated the yielding of both the monopolar and bipolar switching properties. The resistance on-off ratio was between 10 and 10 2 .

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Section: Reram Switching Propertymentioning

confidence: 62%

Resistance switching properties of molybdenum oxide films

et al. 2012

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“…Many materials have been applied to ReRAMs such as perovskite-type oxides (Pr 0.7 Ca 0.3 MnO 3 (PCMO), [1][2][3] SrTiO 3 5 ), binary-type oxides (NiO, [4][5][6][7] TiO 2 , 8 and CuO 9 ), and solid electrolytes (Ag-Ge-S, [10][11][12][13] Cu-Ge-S, 11 Cu 2 S, 14 Ag 2 S 15,16 ) to find the best set of materials to use. The switching characteristics of these materials can be classified into several categories.…”

Section: Introductionmentioning

confidence: 99%

Analysis of resistance switching and conductive filaments inside Cu-Ge-S using in situ transmission electron microscopy

et al. 2012

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In situ transmission electron microscopy (TEM) was carried out to investigate the dynamics of resistance switching in a solid electrolyte, Cu-Ge-S. By applying voltage to Pt-Ir/Cu-Ge-S/Pt-Ir, where Pt-Ir constituted the electrodes, a deposit containing conductive filaments composed mainly of Cu was formed around the cathode. As voltage continued to be applied, the deposit grew and finally narrow conductive filaments made contact with the anode. This corresponded to resistance switching from high-to low-resistance states (HRS and LRS). By alternating the voltage, the deposit contracted toward the cathode and detached from the anode. The resistance immediately changed from LRS to HRS. By applying voltage, the deposit containing Cu-based filaments grew and shrank, and resistance switching occurred at the electrolyte-anode interface. This conductive filament-formation model, which was recently reported, was experimentally confirmed with TEM through dynamic observations of the deposit-containing filaments.

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“…4,6,7 Even with the word "soft," the forming is a wild process for breaking the insulating property. Thus, controlling the forming power and the resulting bridge size are important factors for ReRAM switching.…”

Section: A Forming Power and The Bridge Sizementioning

confidence: 99%

“…Investigations into developing a new type of nonvolatile memory called a resistance random access memory (ReRAM) are intensively conducted using this resistance switching. [1][2][3][4][5][6][7][8][9] The ReRAM has high functionalities such as high-speed access, high integration, low power consumption, and non-volatility. In addition, the fabrication method for producing ReRAMs is compatible to the CMOS process.…”

Section: Introductionmentioning

confidence: 99%

In-situ transmission electron microscopy of conductive filaments in NiO resistance random access memory and its analysis

Fujii

Arita

Hamada

et al. 2013

Journal of Applied Physics

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We used thermal oxidization at various temperatures to prepare NiO/Pr-Ir for use in resistance random access memory (ReRAM) samples. In-situ transmission electron microscopy (TEM) was used to investigate the forming process of these ReRAM samples, where a needle-shaped top electrode of Pt-Ir was attached to the NiO/Pt-Ir ReRAM layer. The forming voltage initializing the NiO layer increased at an oxidization temperature of between 200 and 400 C. In this process, conductive bridges, which are thought to be conductive filaments of a ReRAM, appeared, and their sizes showed a correlation with the injection power. It was as small as about 300 nm 2 when the injection power was 10 À6 W. Energy dispersive X-ray spectroscopy was used to analyze the bridge, and it was experimentally confirmed that the oxygen content of the bridge was lower than that of the initial NiO layer. However, these bridges in the low resistance state did not show further ReRAM switching to the high resistance state inside of a TEM instrument. To check the reason of this result, we investigated samples outside of the TEM instrument, which had similar geometry to that of TEM specimens. They showed the ReRAM switching in air ambient but not in vacuum. Combining these results inside and outside of the TEM instrument, it can be concluded that the existence of oxygen around the conductive filament plays an important role. This supports the filament redox model on the ReRAM operation. V C 2013 American Institute of Physics.

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High speed resistive switching in Pt∕TiO2∕TiN film for nonvolatile memory application

Cited by 267 publications

References 7 publications

Resistance switching properties of molybdenum oxide films

Resistance switching properties of molybdenum oxide films

Analysis of resistance switching and conductive filaments inside Cu-Ge-S using in situ transmission electron microscopy

In-situ transmission electron microscopy of conductive filaments in NiO resistance random access memory and its analysis

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