In the framework of k.p band calculation, we investigate the modulation of the lowfield mobility and the injection velocity of holes in Si-and Ge-channel pMOSFETs under the uniaxial and the biaxial strain. The contribution of the relaxation time and the conductivity effective mass modulation on the mobility enhancement is separately analyzed. Both the mobility and the injection velocity are enhanced most effectively by the uniaxial compressive strain along the (110) channel.
For the first time, we demonstrate standard cell gate density of 3650 KGate/mm 2 and SRAM cell of 0.124 μm 2 for 32nm CMOS platform technology. Both advanced single exposure (SE) lithography and gate-first metal gate/high-k (MG/HK) process contribute to reduce total cost per function by 50% from 45nm technology node, which is unattainable by dual exposure (DE) lithography or double patterning (DP) and poly/SiON gate stack.
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