VB-5 floating substrate effects on the switching characteristics of SOI MOSFET

Kato, Keizo; Taniguchi, K.

doi:10.1109/t-ed.1985.22365

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1985

2008

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Cited by 6 publications

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“…In the following sections, we take a close look at the characteristics such as drain current kinks and double humps in both types of MOSFET. Drain current kinks or double humps should be avoided because it can cause current overshoots in devices, 1,2) which make it very difficult to model and implement circuits precisely. With regard to these nonideal characteristics in SOI MOSFETs, we suggest practical methods of quantitatively evaluating and effectively resolving these problems.…”

Section: Introductionmentioning

confidence: 99%

Evaluation and Resolution for Nonideal Characteristics of Complementary Metal–Oxide–Semiconductor Devices Fabricated on Silicon-on-Insulator

Cho¹,

Park²,

Lee³

et al. 2008

jjap

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Mossbauer spectra of the layer compound Sr, 2Sm3.2Lil >Fe, >04 show significant differences from those of similar compounds, studied previously, where the rare-earth ion was La, Pr or Nd. The Sm spectra are more complicated but can be fitted in an internally consistent way, requiring at least four components. This suggests a significantly greater degree of disorder in the Li/Fe site occupation in the Sm case.

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Section: Introductionmentioning

confidence: 99%