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We observe the unconventional photon blockade effect in quantum dot cavity QED, which, in contrast to the conventional photon blockade, operates in the weak coupling regime. A single quantum dot transition is simultaneously coupled to two orthogonally polarized optical cavity modes, and by careful tuning of the input and output state of polarization, the unconventional photon blockade effect is observed. We find a minimum second-order correlation g ð2Þ ð0Þ ≈ 0.37, which corresponds to g ð2Þ ð0Þ ≈ 0.005 when corrected for detector jitter, and observe the expected polarization dependency and photon bunching and antibunching; close by in parameter space, which indicates the abrupt change from phase to amplitude squeezing. DOI: 10.1103/PhysRevLett.121.043601 A two-level system strongly coupled to a cavity results in polaritonic dressed states with a photon-number dependent energy. This dressing gives rise to the photon blockade effect [1,2] resulting in photon-number dependent transmission and reflection, enabling the transformation of incident coherent light into specific photon number states such as single photons. Single photon sources are a crucial ingredient for various photonic quantum technologies ranging from quantum key distribution to optical quantum computing. Such sources are characterized by a vanishing second-order autocorrelation g ð2Þ ð0Þ ≈ 0 [3]. In the strong coupling regime, where the coupling between the two-level system and the cavity is larger than the cavity decay rate ðg > κÞ [4], photon blockade has been demonstrated in atomic systems [5], quantum dots in photonic crystal cavities [6], and circuit QED [7,8]. At the onset of the weak coupling regime (g ≈ κ), it has been shown that by detuning the dipole transition frequency with respect to the cavity resonance, photon blockade can still be observed [9]. However, moving further into the weak coupling regime (g < κ), which is much easier to achieve [10,11] (in particular if one aims for a small polarization mode splitting), the conventional photon blockade is no longer possible because the energy gap between the polariton states vanishes. Nevertheless, also in the weak coupling regime, the two-level system enables photon number sensitivity, which has recently enabled high-quality single photon sources using polarization postselection [12][13][14] or optimized cavity in-coupling [15,16].In 2010, Liew and Savona introduced the concept of the unconventional photon blockade (UPB) [17,18]

Direct epitaxial integration of III-V materials on Si offers substantial manufacturing cost and scalability advantages over heterogeneous integration. The challenge is that epitaxial growth introduces high densities of crystalline defects that limit device performance and lifetime. Quantum dot lasers, amplifiers, modulators, and photodetectors epitaxially grown on Si are showing promise for achieving low-cost, scalable integration with silicon photonics. The unique electrical confinement properties of quantum dots provide reduced sensitivity to the crystalline defects that result from III-V/Si growth, while their unique gain dynamics show promise for improved performance and new functionalities relative to their quantum well counterparts in many devices. Clear advantages for using quantum dot active layers for lasers and amplifiers on and off Si have already been demonstrated, and results for quantum dot based photodetectors and modulators look promising. Laser performance on Si is improving rapidly with continuous-wave threshold currents below 1 mA, injection efficiencies of 87%, and output powers of 175 mW at 20 °C. 1500-h reliability tests at 35 °C showed an extrapolated mean-time-to-failure of more than ten million hours. This represents a significant stride toward efficient, scalable, and reliable III-V lasers on on-axis Si substrates for photonic integrate circuits that are fully compatible with complementary metal-oxide-semiconductor (CMOS) foundries.

We review recent advances in the field of quantum dot lasers on silicon. A summary of device performance, reliability, and comparison with similar quantum well lasers grown on silicon will be presented. We consider the possibility of scalable, low size, weight, and power nanolasers grown on silicon enabled by quantum dot active regions for future short-reach silicon photonics interconnects.

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We demonstrate the first electrically pumped continuous-wave (CW) III-V semiconductor lasers epitaxially grown on on-axis (001) silicon substrates without offcut or germanium layers, using InAs/GaAs quantum dots as the active region and an intermediate GaP buffer between the silicon and device layers. Broad-area lasers with uncoated facets achieve room-temperature lasing with threshold current densities around 860  A/cm² and 110 mW of single-facet output power for the same device. Ridge lasers designed for low threshold operations show maximum lasing temperatures up to 90°C and thresholds down to 30 mA.

We investigate the impact of threading dislocation density on the reliability of 1.3 lm InAs quantum dot lasers epitaxially grown on Si. A reduction in the threading dislocation density from 2.8 Â 10 8 cm À2 to 7.3 Â 10 6 cm À2 has improved the laser lifetime by about five orders of magnitude when aged continuous-wave near room temperature (35 C). We have achieved extrapolated lifetimes (time to double initial threshold) more than 10 Â 10 6 h. An accelerated laser aging test at an elevated temperature (60 C) reveals that p-modulation doped quantum dot lasers on Si retain superior reliability over unintentionally doped ones. These results suggest that epitaxially grown quantum dot lasers could be a viable approach to realize a reliable, scalable, and efficient light source on Si.

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