13  μm submilliamp threshold quantum dot micro-lasers on Si

Wan, Yating; Norman, Justin; Li, Qiang; Kennedy, M. J.; Liang, Di; Zhang, Chong; Huang, Duanni; Zhang, Zeyu; Liu, Alan Y.; Torres, A.; Jung, Daehwan; Gossard, A. C.; Hu, Evelyn L.; Lau, Kei May; Bowers, John E.

doi:10.1364/optica.4.000940

Cited by 153 publications

(80 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Figure 10 shows the threshold current vs ridge width for deeply etched Fabry-Pérot lasers with a 7 QD layer active region and for deeply etched micronscale ring structures. 52 It can be clearly seen that even at the smallest dimensions the threshold currents are still decreasing with cavity width indicating the low impact of sidewall recombination. In addition to efficiency improvements, such downscaling will also lead to improved integration density for increased PIC functionality and performance.…”

Section: A Lasersmentioning

confidence: 97%

“…6) for rings of 5 µm radius and 3 µm width which shows the tolerance of QD active regions to sidewall recombination in small cavities. These devices also showed CW lasing up to 100 • C. 52 Epitaxial integration could take one of several embodiments. One approach pursued by IMEC uses aspect ratio trapping in nanoscale trenches to eliminate crystalline defects within a couple hundred nanometers of growth.…”

Section: Apl Photonics 3 030901 (2018)mentioning

confidence: 99%

“…52 Each QD effectively acts as a trap for charge carriers moving in plane thus effectively reducing the in-plane diffusion length. Experimental analysis of the ambipolar diffusion length in QD lasers has found that it can be less than 1 µm but is dependent on the injection level, rising to a maximum of ∼1.5 µm, due to the weaker confinement in the excited states of the QD.…”

Section: A Lasersmentioning

confidence: 99%

See 2 more Smart Citations

Perspective: The future of quantum dot photonic integrated circuits

et al. 2018

Self Cite

View full text Add to dashboard Cite

Direct epitaxial integration of III-V materials on Si offers substantial manufacturing cost and scalability advantages over heterogeneous integration. The challenge is that epitaxial growth introduces high densities of crystalline defects that limit device performance and lifetime. Quantum dot lasers, amplifiers, modulators, and photodetectors epitaxially grown on Si are showing promise for achieving low-cost, scalable integration with silicon photonics. The unique electrical confinement properties of quantum dots provide reduced sensitivity to the crystalline defects that result from III-V/Si growth, while their unique gain dynamics show promise for improved performance and new functionalities relative to their quantum well counterparts in many devices. Clear advantages for using quantum dot active layers for lasers and amplifiers on and off Si have already been demonstrated, and results for quantum dot based photodetectors and modulators look promising. Laser performance on Si is improving rapidly with continuous-wave threshold currents below 1 mA, injection efficiencies of 87%, and output powers of 175 mW at 20 °C. 1500-h reliability tests at 35 °C showed an extrapolated mean-time-to-failure of more than ten million hours. This represents a significant stride toward efficient, scalable, and reliable III-V lasers on on-axis Si substrates for photonic integrate circuits that are fully compatible with complementary metal-oxide-semiconductor (CMOS) foundries.

show abstract

Section: A Lasersmentioning

confidence: 97%

Section: Apl Photonics 3 030901 (2018)mentioning

confidence: 99%

Section: A Lasersmentioning

confidence: 99%

See 1 more Smart Citation

Perspective: The future of quantum dot photonic integrated circuits

et al. 2018

Self Cite

View full text Add to dashboard Cite

show abstract

“…This has motivated extensive research towards efficient approaches allowing the integration of III-V semiconductor materials on silicon, including heterogeneous integration [8,9] and hybrid integration [10]. Several groups have now also developed novel epitaxial processes providing high quality III-V materials directly grown on silicon substrates, demonstrating optically or electrically pumped lasing [11][12][13][14][15][16]. An efficient scheme for interfacing these devices with standard silicon photonics devices has not been presented yet.…”

Section: Introductionmentioning

confidence: 99%

Novel adiabatic coupler for III-V nano-ridge laser grown on a Si photonics platform

Shi¹,

Kunert²,

Koninck³

et al. 2019

Opt. Express

View full text Add to dashboard Cite

While III-V lasers epitaxially grown on silicon have been demonstrated, an efficient approach for coupling them with a silicon photonics platform is still missing. In this paper, we present a novel design of an adiabatic coupler for interfacing nanometer-scale III-V lasers grown on SOI with other silicon photonics components. The starting point is a directional coupler, which achieves 100% coupling efficiency from the III-V lasing mode to the Si waveguide TE-like ground mode. To improve the robustness and manufacturability of the coupler, a linear-tapered adiabatic coupler is designed, which is less sensitive to variations and still reaches a coupling efficiency of around 98%. Nevertheless, it has a relatively large footprint and exhibits some undesired residual coupling to TM-like modes. To improve this, a more advanced adiabatic coupler whose geometry is varied along its propagation length is designed and manages to reach ∼100% coupling and decoupling within a length of 200 µm. The proposed couplers are designed for the particular case of III-V nano-ridge lasers monolithically grown using aspect-ratio-trapping (ART) together with nano-ridge engineering (NRE) but are believed to be compatible with other epitaxial III-V/Si integration platforms recently proposed. In this way, the presented coupler is expected to pave the way to integrating III-V lasers monolithically grown on SOI wafers with other photonics components, one step closer towards a fully functional silicon photonics platform. micrometers, complicating the coupling process. Alternatively, several groups have demonstrated that it is possible to suppress defect formation by growing the III-V materials within a narrow opening defined in a SiO 2 mask deposited on the silicon substrate [11,15,16,19,20]. In this case the extent of the III-V structure can be considerably smaller and coupling to a waveguide directly defined in the substrate becomes feasible. E.g. L. Megalini et al. from UCSB demonstrated the growth of an InGaAsP MQW structure on a V-groove-patterned SOI substrate with its QWs ∼ 500 nm away from the Si layer [16]. Y. Han et al. recently demonstrated a nanolaser array emitting at telecom wavelengths grown on SOI, with InGaAs QWs ∼ 300 nm separated from the Si layer [15], while M. Wang et al have shown the growth of InGaAs/InP nanowires on an SOI substrate with the QWs ∼ 500 nm away from the Si layer [19]. Z. Wang et al. demonstrated single-mode lasing of ∼ 500 nm high InP nanowires grown on a Si substrate [11]. Also our previously demonstrated nano-ridge laser [20] (see Fig. 1(a)) with the active layer ∼ 600 nm above the Si substrates fits this scheme. Therefore, in this paper we develop a method to design couplers that allow to integrate this type of sub-micrometer scale lasers with silicon waveguides defined in the same substrate. A simple butt-coupling approach whereby the waveguide is placed in line with the laser cavity is thereby not desired as the selective area growth process often results in irregularly shaped facets as shown in Fig. 1...

show abstract

“…It is, therefore, no surprise that researchers in the field of silicon photonics have strived for years to develop monolithically integrated III-V QD light sources on silicon substrates that can exploit the benefits of QD while also being able to enjoy fully the economics of scale promised by monolithic growth. As a result, III-V QD Fabry-Perot (FP) lasers monolithically grown on Si have made significant progress and have outperformed their QW and bulk counterparts in terms of lower threshold current, higher temperature insensitivity, higher efficiency and longer lifetime [16][17][18][19][20][21][22][23][24][25].…”

Section: Introductionmentioning

confidence: 99%

Monolithic quantum-dot distributed feedback laser array on silicon

Wang¹,

Chen²,

Yu³

et al. 2018

Optica

View full text Add to dashboard Cite

Electrically-pumped lasers directly grown on silicon are key devices interfacing silicon microelectronics and photonics. We report here, for the first time, an electrically-pumped, room-temperature, continuous-wave (CW) and single-mode distributed feedback (DFB) laser array fabricated in InAs/GaAs quantum-dot (QD) gain material epitaxially grown on silicon. CW threshold currents as low as 12 mA and single-mode side mode suppression ratios (SMSRs) as high as 50 dB have been achieved from individual devices in the array. The laser array, compatible with state-of-the-art coarse wavelength division multiplexing (CWDM) systems, has a well-aligned channel spacing of 20±0.2 nm and exhibits a record wavelength coverage range of 100 nm, the full span of the O-band. These results indicate that, for the first time, the performance of lasers epitaxially grown on silicon is elevated to a point approaching real-world CWDM applications, demonstrating the great potential of this technology.

show abstract

13 μm submilliamp threshold quantum dot micro-lasers on Si

Cited by 153 publications

References 19 publications

Perspective: The future of quantum dot photonic integrated circuits

Perspective: The future of quantum dot photonic integrated circuits

Novel adiabatic coupler for III-V nano-ridge laser grown on a Si photonics platform

Monolithic quantum-dot distributed feedback laser array on silicon

Contact Info

Product

Resources

About