Impact of threading dislocation density on the lifetime of InAs quantum dot lasers on Si

Jung, Daehwan; Herrick, Robert W.; Norman, Justin; Turnlund, Katherine; Jan, Catherine; Feng, Kaiyin; Gossard, A. C.; Bowers, John E.

doi:10.1063/1.5026147

Cited by 137 publications

(86 citation statements)

References 25 publications

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“…5(d), since the high BL and WL carrier loss rate manifests itself effectively in a reduced injection efficiency into the QDs. These results agree with the experimentally observed trends reported by Jung et al and Orchard et al [30,40]. It is, however, likely that the modelled slope decrease is even underestimated, since a very high TD density will also lead to dislocation-induced optical losses, as indicated in Ref.…”

Section: Qd Parameters Qw Parameterssupporting

confidence: 92%

“…40. Despite the performance reduction observed at higher values of ρdis, our theoretical results support the hypothesis that the unique properties of QDs, efficient carrier capture and high carrier confinement, are key to the impressive capabilities of QD lasers on Si to operate under high TD densities [30,32]. It should be noted that our model does not contain thermal effects, so it is not considered that the possibility of overcoming the laser threshold may be reduced at increased injection levels.…”

Section: Qd Parameters Qw Parameterssupporting

confidence: 60%

“…The impact of TDs can be described as following. Carriers in the vicinity of a dislocation can migrate into the defect state, where they are likely to recombine non-radiatively [29][30]. Since this process involves carriers in the barrier layer (BL) and the wells in the instance of a QW laser, it becomes increasingly difficult to attain a population inversion in the presence of many dislocations.…”

Section: Resultsmentioning

confidence: 99%

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Origin of Defect Tolerance in InAs/GaAs Quantum Dot Lasers Grown on Silicon

Liu

Martin

Baron

et al. 2020

J. Lightwave Technol.

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High-performance III-V quantum-dot lasers monolithically grown on Si substrates have been demonstrated as a promising solution to realise Si-based laser sources with very low threshold current density, high output power and long lifetime, even with relatively high density of defects due to the material dissimilarities between III-Vs and Si. On the other hand, although conventional III-V quantum-well lasers grown on Si have been demonstrated after great efforts worldwide for more than 40 years, their practicality is still a great challenge because of their very high threshold current density and very short lifetime. However, the physical mechanisms behind the superior performance of silicon-based III-V quantum-dot lasers remain unclear. In this paper, we directly compare the performance of a quantum-well and a quantum-dot laser monolithically grown on on-axis Si (001) substrates, both experimentally and theoretically, under the impact of the same density of threading dislocations. A quantum-dot laser grown on a Si substrate with a high operating temperature (105 °C) has been demonstrated with a low threshold current density of 173 A/cm 2 and a high single facet output power >100 mW at room temperature, while there is no lasing operation for the quantum-well device at room temperature even at high injection levels. By using a rate equation travelling-wave model, the quantum-dot laser's superior performance compared with its quantum well-based counterpart on Si is theoretically explained in terms of the unique properties of quantum dots, i.e., efficient carrier capture and high thermal energy barriers preventing the carriers from migrating into defect states.

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Section: Qd Parameters Qw Parameterssupporting

confidence: 92%

Section: Qd Parameters Qw Parameterssupporting

confidence: 60%

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Origin of Defect Tolerance in InAs/GaAs Quantum Dot Lasers Grown on Silicon

Liu

Martin

Baron

et al. 2020

J. Lightwave Technol.

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“…This analysis suggests that we might expect the degradation rate in quantum dot lasers to be related to the carrier density at threshold, which is itself related to the gain requirement or total optical loss. Recent measurements [18] have shown that the degradation rate is lower in p-modulation doped quantum dot lasers grown on silicon and in this case the electron and hole quasi-Fermi levels are both moved towards the valence states [19] reducing the electron population able to access the 2D states, also supporting the argument that the carrier density populating the extended states, and thus able to access the defects, is critical in addition to the number of defects present.…”

supporting

confidence: 53%

Degradation of III–V Quantum Dot Lasers Grown Directly on Silicon Substrates

Shutts

Allford

Spinnler

et al. 2019

IEEE J. Select. Topics Quantum Electron.

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Initial age-related degradation mechanisms for InAs quantum dot lasers grown on silicon substrates emitting at 1.3 µm are investigated. The rate of degradation is observed to increase for devices operated at higher carrier densities and is therefore dependent on gain requirement or cavity length. While carrier localization in quantum dots minimizes degradation, an increase in the number of defects in the early stages of aging can increase the internal optical-loss that can initiate rapid degradation of laser performance due to the rise in threshold carrier density. Population of the two-dimensional states is considered the major factor for determining the rate of degradation, which can be significant for lasers requiring high threshold carrier densities. This is demonstrated by operating lasers of different cavity lengths with a constant current and measuring the change in threshold current at regular intervals. A segmented-contact device, which can be used to measure the modal absorption and also operate as a laser, is used to determine how the internal optical-loss changes in the early stages of degradation. Structures grown on silicon show an increase in internal optical loss, whereas the same structure grown on GaAs shows no signs of increase in internal optical loss when operated under the same conditions.

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“…With careful device and contact mask design, we propose that ECCI could even be used to track dislocation evolution in operando. This is a fascinating opportunity to explore the failure mechanisms of semiconductor devices such as GaAs/Si quantum dot lasers [37,38] and GaN [39] and SiC [40] power devices where carrier recombination or electric field-induced dislocation motion is suspected or has been observed postdegradation.…”

mentioning

confidence: 99%