High performance continuous wave 1.3 <i>μ</i>m quantum dot lasers on silicon

Liu, Alan Y.; Zhang, Chong; Norman, Justin; Snyder, Andrew; Lubyshev, D.; Fastenau, J. M.; Liu, Amy W. K.; Gossard, A. C.; Bowers, John E.

doi:10.1063/1.4863223

Cited by 316 publications

(189 citation statements)

References 17 publications

Supporting

Mentioning

173

Contrasting

Unclassified

Order By: Relevance

“…10 Recently, direct epitaxy of III-V lasers on Si has attracted significant attention with the successful use of self-assembled quantum dots (QDs) as active materials. [11][12][13] The distinctive zerodimensional density of states of QDs offers lower threshold current density with improved thermal stability in III-V lasers, 14 and their discrete localization promises greater immunity to defects associated with III-V/Si heteroepitaxy when compared to their conventional quantum-well counterparts. 15 More interestingly, these QDs are capable of bending or pinning the threading dislocations (TDs) because of their large strain field.…”

mentioning

confidence: 99%

1.55 μm room-temperature lasing from subwavelength quantum-dot microdisks directly grown on (001) Si

Shi

Zhu

et al. 2017

Applied Physics Letters

View full text Add to dashboard Cite

Miniaturized laser sources can benefit a wide variety of applications ranging from on-chip optical communications and data processing, to biological sensing. There is a tremendous interest in integrating these lasers with rapidly advancing silicon photonics, aiming to provide the combined strength of the optoelectronic integrated circuits and existing large-volume, low-cost silicon-based manufacturing foundries. Using III-V quantum dots as the active medium has been proven to lower power consumption and improve device temperature stability. Here, we demonstrate room-temperature InAs/InAlGaAs quantum-dot subwavelength microdisk lasers epitaxially grown on (001) Si, with a lasing wavelength of 1563 nm, an ultralow-threshold of 2.73 μW, and lasing up to 60 °C under pulsed optical pumping. This result unambiguously offers a promising path towards large-scale integration of cost-effective and energy-efficient silicon-based long-wavelength lasers.

show abstract

mentioning

confidence: 99%

1.55 μm room-temperature lasing from subwavelength quantum-dot microdisks directly grown on (001) Si

Shi

Zhu

et al. 2017

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…In this case, the desired light source would be templated III-V quantum dots grown in the intrinsic region of a lateral Si p − i − n junction. While great progress in this field has been made [58][59][60][61][62][63][64], additional effort is needed to achieve the waveguide-integrated sources required for this system. Promisingly, electrically injected single-photon emission has been demonstrated in these materials [58][59][60][61].…”

Section: G Electrically-injected Light Sourcementioning

confidence: 99%

Superconducting Optoelectronic Circuits for Neuromorphic Computing

et al. 2017

View full text Add to dashboard Cite

Neural networks have proven effective for solving many difficult computational problems. Implementing complex neural networks in software is very computationally expensive. To explore the limits of information processing, it will be necessary to implement new hardware platforms with large numbers of neurons, each with a large number of connections to other neurons. Here we propose a hybrid semiconductor-superconductor hardware platform for the implementation of neural networks and large-scale neuromorphic computing. The platform combines semiconducting few-photon light-emitting diodes with superconducting-nanowire single-photon detectors to behave as spiking neurons. These processing units are connected via a network of optical waveguides, and variable weights of connection can be implemented using several approaches. The use of light as a signaling mechanism overcomes fanout and parasitic constraints on electrical signals while simultaneously introducing physical degrees of freedom which can be employed for computation. The use of supercurrents achieves the low power density necessary to scale to systems with enormous entropy. The proposed processing units can operate at speeds of at least 20 MHz with fully asynchronous activity, light-speed-limited latency, and power densities on the order of 1 mW/cm 2 for neurons with 700 connections operating at full speed at 2 K. The processing units achieve an energy efficiency of ≈ 20 aJ per synapse event. By leveraging multilayer photonics with deposited waveguides and superconductors with feature sizes > 100 nm, this approach could scale to systems with massive interconnectivity and complexity for advanced computing as well as explorations of information processing capacity in systems with an enormous number of information-bearing microstates.

show abstract

“…Most recently, III-V quantum-dot (QD) based light emitters, especially QD lasers, have been considered to be the most attractive candidate for realizing practical III-V/Si lasers owning to their unique characteristics, in particular ultra-low threshold currents [11], temperature insensitivity and less sensitivity to threading dislocations, hence impressive results have been achieved [5,8,[12][13][14][15][16][17][18]. In addition to QD lasers, QD-based superluminescent light emitting diodes (SLDs) have also experienced rapid development for applications in many areas, such as fiber-optic gyroscopes [19], optical coherence tomography (OCT) [20] and wavelength-division multiplexing systems [21], because they benefit significantly from QD's inherently large size inhomogeneity when grown by the Stranski-Krastanow (S-K) mode [22].…”

Section: Introductionmentioning

confidence: 99%

Long-Wavelength InAs/GaAs Quantum-Dot Light Emitting Sources Monolithically Grown on Si Substrate

Chen

Tang

et al. 2015

Photonics

View full text Add to dashboard Cite

Direct integration of III-V light emitting sources on Si substrates has attracted significant interest for addressing the growing limitations for Si-based electronics and allowing the realization of complex optoelectronics circuits. However, the high density of threading dislocations introduced by large lattice mismatch and incompatible thermal expansion coefficient between III-V materials and Si substrates have fundamentally limited monolithic epitaxy of III-V devices on Si substrates. Here, by using the InAlAs/GaAs strained layer superlattices (SLSs) as dislocation filter layers (DFLs) to reduce the density of threading dislocations. We firstly demonstrate a Si-based 1.3 µm InAs/GaAs quantum dot (QD) laser that lases up to 111 °C, with a low threshold current density of 200 A/cm 2 and high output power over 100 mW at room temperature. We then demonstrate the operation of InAs/GaAs QD superluminescent light emitting diodes (SLDs) monolithically grown on Si substrates. The fabricated two-section SLD exhibits a 3 dB linewidth of 114 nm, centered at ～1255 nm with a corresponding output power of 2.6 mW at room temperature. Our work complements hybrid integration using wafer bonding and represents a significant milestone for direct monolithic integration of III-V light emitters on Si substrates. OPEN ACCESSPhotonics 2015, 2 647

show abstract

High performance continuous wave 1.3 μm quantum dot lasers on silicon

Cited by 316 publications

References 17 publications

1.55 μm room-temperature lasing from subwavelength quantum-dot microdisks directly grown on (001) Si

1.55 μm room-temperature lasing from subwavelength quantum-dot microdisks directly grown on (001) Si

Superconducting Optoelectronic Circuits for Neuromorphic Computing

Long-Wavelength InAs/GaAs Quantum-Dot Light Emitting Sources Monolithically Grown on Si Substrate

Contact Info

Product

Resources

About