A Review of High-Performance Quantum Dot Lasers on Silicon

Norman, Justin; Jung, Daehwan; Zhang, Zeyu; Wan, Yating; Liu, Songtao; Shang, Chen; Herrick, Robert W.; Chow, Weng W.; Gossard, A. C.; Bowers, John E.

doi:10.1109/jqe.2019.2901508

Cited by 134 publications

(95 citation statements)

References 56 publications

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“…Optical frequency comb passively mode-locked semiconductor quantum dot lasers directly grown on silicon are ideal sources for applications including high data rate optical communication applications in the O-band [1][2][3][4][5], spectroscopic sensing on a silicon photonics chip [6], dual-comb spectroscopy [7] and for silicon-chip based ultra-fast optical oscilloscopes [8]. Mode-locked quantum dot semiconductor lasers offer small size, higher functionality and lower energy consumption photonic integrated circuits on silicon, the material of choice for the photonics industry [2][3][4][9][10][11][12][13][14][15]. Ultra-fast optical pulse generation in quantum dot lasers benefits from broad gain spectra, due to the inhomogeneous broadening of the dots [16][17][18], ultra-fast carrier dynamics [19], modal gain saturating abruptly with carrier density [20,21] and easily saturable absorbers [22].…”

Section: Introductionmentioning

confidence: 99%

Passively mode-locked semiconductor quantum dot on silicon laser with 400 Hz RF line width

Auth¹,

Liu²,

Norman³

et al. 2019

Opt. Express

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Mode-locked InAs/InGaAs quantum dot lasers emitting optical frequency combs centered at 1310 nm are promising sources for high-speed and high-capacity communication applications. We report on the stable optical pulse train generation by a monolithic passively mode-locked edge-emitting two-section quantum dot laser based on a five-stack InAs/InGaAs dots-in-a-well structure directly grown on an on-axis (001) silicon substrate by solid-source molecular beam epitaxy. Optical pulses as short as 1.7 ps at a pulse repetition rate or intermode beat frequency of 9.4 GHz are obtained. A minimum pulse-to-pulse timing jitter of 9 fs, corresponding to a repetition rate line width of 400 Hz, is demonstrated. The generated optical frequency combs yield exceptional low amplitude jitter performance and comb widths exceed 5.5 nm at a −3 dB criteria, containing more than 100 comb carriers.

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Section: Introductionmentioning

confidence: 99%

Passively mode-locked semiconductor quantum dot on silicon laser with 400 Hz RF line width

Auth¹,

Liu²,

Norman³

et al. 2019

Opt. Express

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“…In addition to the solid-state waveguide lasers based on laser crystals, electrically pumped semiconductor laser diodes based on the III-V materials also receive wide applications in silicon photonics [91,[95][96][97][101][102][103][104][105][106][107][108][109]. The most commonly used SAs in III-V systems are InAs and InGaAs quantum-dot (QD) layers fabricated by molecular beam epitaxy (MBE).…”

Section: Mode-locked Waveguide Lasersmentioning

confidence: 99%

Low-dimensional materials as saturable absorbers for pulsed waveguide lasers

Pang

et al. 2020

J. Phys. Photonics

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Low-dimensional (LD) materials, such as 2D materials, carbon nanotubes, and nanoparticles, have attracted increasing attention for light modulation in photonics and optoelectronics. The high nonlinearity, broad bandwidth, and fast response enabled by LD materials are critical to realize desired functionalities in highly integrated photonic systems. Driven by the growing demand for compact laser sources, LD materials have recently demonstrated their great capacity as saturable absorbers in pulsed (Q-switched or mode-locked) laser generation in waveguide platforms. We review the recent advances of pulsed waveguide lasers based on LD materials. A perspective is also presented in this rapidly growing research field. Fundamentals of LD saturable absorbers and optical waveguidesOwing to the diverse electronic structures, LD materials offer versatile options to realize wide applications based on the nonlinear optical response. Currently, semiconductor saturable absorber mirrors (SESAMs) are the most frequently used commercial SAs, processing high damage threshold and prominent stability. However, a variety of LD materials retain a number of advantages to be nonlinear SAs, of which SESAMs © 2020 The Author(s). Published by IOP Publishing Ltd J. Phys. Photonics 2 (2020) 031001 Z Li et al cannot fulfill, such as broadband operation, ultrafast recovery time, low cost, and better compatibility with compact devices such as fibers and waveguides. Recently, an increasing number of research efforts have been made to unfold the nonlinear optical properties as well as its corresponding applications of the emerging LD materials [14][15][16][17][18][19][20][21][22][23]. For semiconducting or semimetallic LD materials, the main mechanism for nonlinear saturable absorption is Pauli blocking. After photoexcitation, non-equilibrium carrier state could be created, in which valence-band electrons can be excited to the conduction band, and a hole can be formed on the valence band. As the increase of the incident light intensity, the photon absorption processes of LD materials experience a transition from linear absorption to saturable absorption. When the light intensity continues increasing and reaches the saturation intensity, the extra photons will no longer be absorbed by the electrons in the valence band, and the transmittance of the SA will not increase but gradually tend to a stable value. For metallic nanoparticles, the dominant mechanism is the LSPR effect arising from the interaction between the electric field of incident light and the surface electrons in the conduction band. The optical nonlinearity could be significantly enhanced while maintaining the ultrafast recovery time. These nonlinear effects are widely used in passively Q-switched or mode-locked lasers. In order to characterize the nonlinear optical properties, femtosecond Z-scan spectroscopy is typically employed by moving the sample along the Z direction through a focused Gaussian beam. The laser intensity can be varied continuously with the maximum at the focal poin...

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“…В настоящее время многие полупроводниковые приборы выполнены на основе наноструктур с размерами активных областей порядка десятков нанометров [10][11][12][13]. В таких структурах свойства поверхностей и интерфейсов становятся определяющими.…”

Section: Introductionunclassified

“…Несмотря на наличие целого ряда обзорных статей, посвященных приборам на основе полупроводников А III В V (например, [10,12,13,21,28,29]), проблема химической модификации электронных свойств поверхности рассматривается только вскользь. С другой стороны, имеющиеся обзоры [23,30,31], посвященные модификации электронных свойств поверхностей полупроводников А III В V , были опубликованы сравнительно давно и соответственно не отражают в полной мере текущее состояние исследований данной проблемы.…”

Section: Introductionunclassified

Модификация Атомной И Электронной Структуры Поверхности Полупроводников А-=sup=-Iii-=/Sup=-В-=sup=-v-=/Sup=- На Границе С Растворами Электролитов О Б З Ор

Лебедев¹

2020

Физика И Техника Полупроводников

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Recent experimental and theoretical results on modification of the surface atomic and electronic structure of various III–V semiconductor with electrolyte solutions are reviewed. The relationship between the chemical and charge transfer processes that proceed at the semiconductor/electrolyte interfaces and accompanying modification of the semiconductor surface atomic and electronic structure is revealed. Advances in the application of electrolyte solutions for modification of the semiconductor nanostructures and device performance are discussed.

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A Review of High-Performance Quantum Dot Lasers on Silicon

Cited by 134 publications

References 56 publications

Passively mode-locked semiconductor quantum dot on silicon laser with 400 Hz RF line width

Passively mode-locked semiconductor quantum dot on silicon laser with 400 Hz RF line width

Low-dimensional materials as saturable absorbers for pulsed waveguide lasers

Модификация Атомной И Электронной Структуры Поверхности Полупроводников А-=sup=-Iii-=/Sup=-В-=sup=-v-=/Sup=- На Границе С Растворами Электролитов О Б З Ор

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