Passively mode-locked semiconductor quantum dot on silicon laser with 400 Hz RF line width

Auth, Dominik; Liu, Songtao; Norman, Justin; Bowers, John E.; Breuer, Stefan

doi:10.1364/oe.27.027256

Cited by 24 publications

(12 citation statements)

References 50 publications

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“…For passively mode-locked semiconductor lasers, the RF linewidth of the repetition frequency signal is in most cases dominated by the ASE-induced timing jitter of the pulse train. [52,[58][59][60][61][62] In this case the repetition frequency signal has a Lorentzian profile. However, if the Lorentzian linewidth becomes sufficiently narrow the RF linewidth can be dominated by environmental and technical noise resulting in a non-Lorentzian profile.…”

Section: Single Sideband Phase Noise Measurementmentioning

confidence: 99%

“…[ 39 ] To determine the RF linewidth achievable when eliminating technical and environmental noise, a SSB‐PN measurement can be performed. [ 59 ] Figure a shows the SSB‐PN of the repetition frequency signal (755 MHz) at sufficiently large offset frequencies from the carrier to avoid influence of technical noise. Together with the measured SSB‐PN, a Lorentzian profile with a 1 Hz FWHM is plotted.…”

Section: Single Sideband Phase Noise Measurementmentioning

confidence: 99%

“…The resulting ASE‐limited 1 Hz RF linewidth is the lowest reported so far and is determined in the same way as was done for the previously reported narrowest linewidths. [ 59 ] This 1 Hz linewidth corresponds to a pulse‐to‐pulse root‐mean‐square timing jitter of 19 fs for a repetition period of 1.3 ns. [ 60 ] Furthermore from the SSB‐PN, a timing jitter power spectral density (PSD) of 111 fs 2 Hz −1 at a 10 kHz offset frequency and an integrated timing jitter of 1 ps for a frequency range between 10 kHz and 1 MHz are calculated (see Note S3, Supporting Information).…”

Section: Single Sideband Phase Noise Measurementmentioning

confidence: 99%

See 2 more Smart Citations

Low Noise Heterogeneous III‐V‐on‐Silicon‐Nitride Mode‐Locked Comb Laser

Cuyvers

Haq

Beeck

et al. 2021

Laser & Photonics Reviews

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Generating optical combs in a small form factor is of utmost importance for a wide range of applications such as datacom, LIDAR, and spectroscopy. Electrically powered mode-locked diode lasers provide combs with a high conversion efficiency, while simultaneously allowing for a dense spectrum of lines. In recent years, a number of integrated chip scale mode-locked lasers have been demonstrated. However, thus far these devices suffer from significant linear and nonlinear losses in the passive cavity, limiting the attainable cavity size and noise performance, eventually inhibiting their application scope. Here, we leverage the ultra-low losses of silicon-nitride waveguides to demonstrate a heterogeneously integrated III-V-on-silicon-nitride passively mode-locked laser with a narrow 755 MHz line spacing, a radio frequency linewidth of 1 Hz and an optical linewidth below 200 kHz. Moreover, these comb sources are fabricated with wafer scale technology, hence enabling low-cost and high volume manufacturable devices.

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Section: Single Sideband Phase Noise Measurementmentioning

confidence: 99%

Section: Single Sideband Phase Noise Measurementmentioning

confidence: 99%

Section: Single Sideband Phase Noise Measurementmentioning

confidence: 99%

See 1 more Smart Citation

Low Noise Heterogeneous III‐V‐on‐Silicon‐Nitride Mode‐Locked Comb Laser

Cuyvers

Haq

Beeck

et al. 2021

Laser & Photonics Reviews

View full text Add to dashboard Cite

show abstract

“…In addition to the solid-state waveguide lasers based on laser crystals, electrically pumped semiconductor laser diodes based on the III-V materials also receive wide applications in silicon photonics [91,[95][96][97][101][102][103][104][105][106][107][108][109]. The most commonly used SAs in III-V systems are InAs and InGaAs quantum-dot (QD) layers fabricated by molecular beam epitaxy (MBE).…”

Section: Mode-locked Waveguide Lasersmentioning

confidence: 99%

“…The active region is the unintentionally doped GaAs waveguide that sandwiched by p-and n-AlGaAs QD layers. More recently, Auth et al also demonstrated 9.4 GHz III-V laser based on a five-stack InAs/InGaAs QD layers [97]. The superb compatibility with the existing CMOS logic enables III-V laser systems to be an important platform for the generation of ultrashort pulses.…”

Section: Mode-locked Waveguide Lasersmentioning

confidence: 99%

Low-dimensional materials as saturable absorbers for pulsed waveguide lasers

Pang

et al. 2020

J. Phys. Photonics

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Low-dimensional (LD) materials, such as 2D materials, carbon nanotubes, and nanoparticles, have attracted increasing attention for light modulation in photonics and optoelectronics. The high nonlinearity, broad bandwidth, and fast response enabled by LD materials are critical to realize desired functionalities in highly integrated photonic systems. Driven by the growing demand for compact laser sources, LD materials have recently demonstrated their great capacity as saturable absorbers in pulsed (Q-switched or mode-locked) laser generation in waveguide platforms. We review the recent advances of pulsed waveguide lasers based on LD materials. A perspective is also presented in this rapidly growing research field. Fundamentals of LD saturable absorbers and optical waveguidesOwing to the diverse electronic structures, LD materials offer versatile options to realize wide applications based on the nonlinear optical response. Currently, semiconductor saturable absorber mirrors (SESAMs) are the most frequently used commercial SAs, processing high damage threshold and prominent stability. However, a variety of LD materials retain a number of advantages to be nonlinear SAs, of which SESAMs © 2020 The Author(s). Published by IOP Publishing Ltd J. Phys. Photonics 2 (2020) 031001 Z Li et al cannot fulfill, such as broadband operation, ultrafast recovery time, low cost, and better compatibility with compact devices such as fibers and waveguides. Recently, an increasing number of research efforts have been made to unfold the nonlinear optical properties as well as its corresponding applications of the emerging LD materials [14][15][16][17][18][19][20][21][22][23]. For semiconducting or semimetallic LD materials, the main mechanism for nonlinear saturable absorption is Pauli blocking. After photoexcitation, non-equilibrium carrier state could be created, in which valence-band electrons can be excited to the conduction band, and a hole can be formed on the valence band. As the increase of the incident light intensity, the photon absorption processes of LD materials experience a transition from linear absorption to saturable absorption. When the light intensity continues increasing and reaches the saturation intensity, the extra photons will no longer be absorbed by the electrons in the valence band, and the transmittance of the SA will not increase but gradually tend to a stable value. For metallic nanoparticles, the dominant mechanism is the LSPR effect arising from the interaction between the electric field of incident light and the surface electrons in the conduction band. The optical nonlinearity could be significantly enhanced while maintaining the ultrafast recovery time. These nonlinear effects are widely used in passively Q-switched or mode-locked lasers. In order to characterize the nonlinear optical properties, femtosecond Z-scan spectroscopy is typically employed by moving the sample along the Z direction through a focused Gaussian beam. The laser intensity can be varied continuously with the maximum at the focal poin...

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Nonlinear Loss Engineering in Near‐Zero‐Index Bulk Materials

Jaffray,

Clerici,

Heijnen

et al. 2023

Advanced Optical Materials

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Transparent conducting oxides (TCOs) show unprecedented optical nonlinearities in the near infrared wavelength range, where the real part of their linear refractive index approaches zero. More specifically, the Kerr nonlinearities of these materials have sparked widespread attention due to their magnitude and speed. However, due to the absorptive nature of these nonlinear processes, it is of fundamental interest to further investigate the imaginary component of the nonlinear index. The present work studies the nonlinear optical absorption properties of aluminium‐doped zinc oxide (AZO) thin films in their near‐zero‐index (NZI) spectral window. It is found that the imaginary part of the refractive index is reduced under optical excitation such that the field penetration depth more than doubles. An optically induced shift of the NZI bandwidth of ≈120 nm for a pump intensity of 1.3 TW cm−2 is also demonstrated. Looking into the optically induced spectral redistribution of the probe signal, local net gain is recorded, which is ascribed to a nonlinear adiabatic energy transfer. The present study adds key information about the fundamental interplay between real and imaginary nonlinear indices in NZI media, while advancing parametric amplification as viable direction for loss compensation.

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Passively mode-locked semiconductor quantum dot on silicon laser with 400 Hz RF line width

Cited by 24 publications

References 50 publications

Low Noise Heterogeneous III‐V‐on‐Silicon‐Nitride Mode‐Locked Comb Laser

Low Noise Heterogeneous III‐V‐on‐Silicon‐Nitride Mode‐Locked Comb Laser

Low-dimensional materials as saturable absorbers for pulsed waveguide lasers

Nonlinear Loss Engineering in Near‐Zero‐Index Bulk Materials

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