Electrically pumped continuous-wave 13  μm quantum-dot lasers epitaxially grown on on-axis (001)  GaP/Si

Liu, Alan Y.; Peters, Jonathan; Huang, Xiaoping; Jung, Daehwan; Norman, Justin; Lee, Minjoo Larry; Gossard, A. C.; Bowers, John E.

doi:10.1364/ol.42.000338

Cited by 142 publications

(82 citation statements)

References 7 publications

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“…2a). By considering shifted absorption edge (at 210 nm) of SnO 2 sample, average crystallite (particle) size has been estimated and found to be 10 nm by using the following hyperbolic band model [5]:…”

Section: Resultsmentioning

confidence: 99%

“…To test the operation of SnO 2 quantum dots as Nano Light emitting devices, the electroluminescence (EL) of the sample [5,6,19] at room temperature was determined (Fig. 4).…”

Section: Fig 3 Hrtem Images Of Sno 2 Qds In Pvp Matrixmentioning

confidence: 99%

“…The synthesis of semiconductor quantum dots and their different applications as various electronic and optoelectronic devices including different kinds of sensors, devices are among the top research areas at present [1][2][3][4][5][6]. Recently, many techniques [1][2][3][4] like molecular beam epitaxy (MBE), radio frequency sputtering (RF), liquid phase epitaxy (LPE), quenching etc.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

SnO2 quantum dots for nano light emitting devices

Nath¹,

Ganguly²,

Gope³

et al. 2017

Nanosystems: Phys. Chem. Math.

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We prepared SnO 2 quantum dots embedded in polyvinylpyrrolidone (PVP) matrix and report its operation as a Nano Light emitting device. The samples have been prepared via quenching technique where bulk ZnO powder is sintered at a very high temperature of 1000 • C and then quenched into ice cold polyvinylpyrrolidone solution. The specimen was then characterized using UV/VIS spectroscopy, X-ray diffraction study and high resolution transmission electron microscopy (HRTEM). These studies indicate the sizes of quantum dots to be within 9 nm. The prepared quantum dot samples have been evaluated as nano light emitting devices by exploring the variation of electroluminescence (light emission phenomenon) with supply voltage at room temperature.

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Section: Resultsmentioning

confidence: 99%

“…To test the operation of SnO 2 quantum dots as Nano Light emitting devices, the electroluminescence (EL) of the sample [5,6,19] at room temperature was determined (Fig. 4).…”

Section: Fig 3 Hrtem Images Of Sno 2 Qds In Pvp Matrixmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

SnO2 quantum dots for nano light emitting devices

Nath¹,

Ganguly²,

Gope³

et al. 2017

Nanosystems: Phys. Chem. Math.

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“…Недавно появились работы, в которых такие лазерные диоды были выращены на неотклоненных кремниевых подлож-ках [4][5][6][7].…”

Section: Introductionunclassified

Технология изготовления лазерных диодов из структур GaAs/InGaAs/AlGaAs, выращенных на Ge/Si подложке

Алешкин¹,

Байдусь²,

Dubinov³

et al. 2017

Физика И Техника Полупроводников

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Созданы InGaAs/GaAs/AlGaAs лазерные диоды с квантовыми ямами, выращенными методом МОГФЭ на неотклоненной Si (001)-подложке с буферным слоем Ge. Диоды генерируют стимулированное излучение в импульсном режиме при комнатной температуре в спектральном диапазоне 1.09−1.11 мкм.

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“…Much work has thus been devoted in the last decade to integrating III-V laser diodes on Si platforms for telecom applications. Impressive results have been achieved in the visible to near infrared wavelength range by both heterogeneous integration, where III-V materials are bonded to silicon [11][12][13][14] , and direct epitaxial growth of III-V laser diodes on Si substrates [15][16][17][18][19][20] . In parallel, extending silicon photonics toward the mid-infrared (MIR) wavelength spectral region (2-20 µm) has emerged as a new frontier 21 .…”

mentioning

confidence: 99%

Quantum cascade lasers grown on silicon

Баранов

Nguyen-Van

Loghmari

et al. 2018

2018 International Conference Laser Optics (ICLO)

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Technological platforms offering efficient integration of III-V semiconductor lasers with silicon electronics are eagerly awaited by industry. The availability of optoelectronic circuits combining III-V light sources with Si-based photonic and electronic components in a single chip will enable, in particular, the development of ultra-compact spectroscopic systems for mass scale applications. The first circuits of such type were fabricated using heterogeneous integration of semiconductor lasers by bonding the III-V chips onto silicon substrates. Direct epitaxial growth of interband III-V laser diodes on silicon substrates has also been reported, whereas intersubband emitters grown on Si have not yet been demonstrated. We report the first quantum cascade lasers (QCLs) directly grown on a silicon substrate. These InAs/ AlSb QCLs grown on Si exhibit high performances, comparable with those of the devices fabricated on their native InAs substrate. The lasers emit near 11 µm, the longest emission wavelength of any laser integrated on Si. Given the wavelength range reachable with InAs/AlSb QCLs, these results open the way to the development of a wide variety of integrated sensors.The 20th Century has seen unparalleled success of the silicon-based microelectronics industry, whereas the 21st Century is witnessing the explosion of photonics. Silicon photonics lies at the convergence of both fields and promises to be the next disruptive technology for integrated circuits 1 . This however requires that the whole set of optoelectronics functions be integrated onto a Si platform. While various Si-based modulators and photodetectors have already been demonstrated 2-5 , integrated light sources have for long remained a challenge 6 . Silicon-based sources would straight away bridge the gap but the indirect bandgap of Si or Ge is a severe limitation and, in spite of unquestionable advances [7][8][9][10] , such devices will not outperform in the foreseeable future their III-V semiconductor counterparts which remain the most efficient semiconductor laser technology. Much work has thus been devoted in the last decade to integrating III-V laser diodes on Si platforms for telecom applications. Impressive results have been achieved in the visible to near infrared wavelength range by both heterogeneous integration, where III-V materials are bonded to silicon [11][12][13][14] , and direct epitaxial growth of III-V laser diodes on Si substrates [15][16][17][18][19][20] . In parallel, extending silicon photonics toward the mid-infrared (MIR) wavelength spectral region (2-20 µm) has emerged as a new frontier 21 . Indeed, most molecules exhibit absorption fingerprints in the MIR range 22 , which is of crucial interest for societal applications such as health diagnostics, detection of biological and organic compounds, monitoring of toxic gases or of greenhouse gas emission, to name but a few. MIR Si photonics could thus lead to integrated, compact, cost-effective, smart spectroscopy instruments 21,23 . Several groups have already demonstrated...

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Electrically pumped continuous-wave 13 μm quantum-dot lasers epitaxially grown on on-axis (001) GaP/Si

Cited by 142 publications

References 7 publications

SnO2 quantum dots for nano light emitting devices

SnO2 quantum dots for nano light emitting devices

Технология изготовления лазерных диодов из структур GaAs/InGaAs/AlGaAs, выращенных на Ge/Si подложке

Quantum cascade lasers grown on silicon

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