The controlled scaling of diamond defect center based quantum registers relies on the ability to position NVs with high spatial resolution. Using ion implantation, shallow (< 10 nm) NVs can be placed with accuracy below 20nm, but generally show reduced spin properties compared to bulk NVs. We demonstrate the augmentation of spin properties for shallow implanted NV centers using an overgrowth technique. An increase of the coherence times up to an order of magnitude (T 2 = 250s) was achieved. Dynamic decoupling of defects spins achieves ms decoherence times. The study marks a further step towards achieving strong coupling among defects positioned with nm precision.One of the key challenges in experimental quantum information science is the identification of isolated quantum mechanical systems which exhibit long coherence times and can be manipulated and coupled in a scalable fashion. Single defects in diamond and especially the negatively charged nitrogen vacancy (NV) center are a perfect platform for studying the quantum dynamics of spin systems. The NV consists of a substitutional nitrogen atom with an adjacent vacancy and an extra electron attached to its complex. It has a long-lived spin triplet in its electronic ground state with coherence times ranging up to 3 ms under ambient conditions [1]. The NV spin can be prepared and detected by optical means, and microwave excitation can be used to control its spin state [2,3,4]. Quantum registers based on the coupling of one NV center to an electron spin of another proximal NV center [5,6] as well as with nuclear spins of neighboring 13 C atoms [7,8,9,10,11] have already been demonstrated experimentally.Of special interest in the context of large scale spin arrays is the generation of multiple strongly coupled NV centers, since this allows the performance of advanced quantum protocols. Since the

The negatively charged nitrogen-vacancy (NV) center in diamond has been shown recently as an excellent sensor for external spins. Nevertheless, their optimum engineering in the near-surface region still requires quantitative knowledge in regard to their activation by vacancy capture during thermal annealing. To this aim, we report on the depth profiles of near-surface helium-induced NV centers (and related helium defects) by step-etching with nanometer resolution. This provides insights into the efficiency of vacancy diffusion and recombination paths concurrent to the formation of NV centers. It was found that the range of efficient formation of NV centers is limited only to approximately 10 to 15 nm (radius) around the initial ion track of irradiating helium atoms. Using this information we demonstrate the fabrication of nanometric-thin (δ) profiles of NV centers for sensing external spins at the diamond surface based on a three-step approach, which comprises (i) nitrogen-doped epitaxial CVD diamond overgrowth, (ii) activation of NV centers by low-energy helium irradiation and thermal annealing, and (iii) controlled layer thinning by low-damage plasma etching. Spin coherence times (Hahn echo) ranging up to 50 μs are demonstrated at depths of less than 5 nm in material with 1.1% of (13)C (depth estimated by spin relaxation (T1) measurements). At the end, the limits of the helium irradiation technique at high ion fluences are also experimentally investigated.

Influence of a static magnetic field on the photoluminescence of an ensemble of nitrogen-vacancy color centers in a diamond single-crystal Appl. Phys. Lett. 95, 133101 (2009);

Articles you may be interested inCreation of quantum entanglement with two separate diamond nitrogen vacancy centers coupled to a photonic molecule

The creation of single, negatively charged silicon vacancy (SiV−) centers in well-defined diamond layers close to the host surface is a crucial step for the development of diamond-based quantum optic devices with many applications in nanophotonics, quantum sensing, or quantum information science. Here, we report on the creation of shallow (10 nm below the surface), single SiV− centers in diamond using low energy Si+ ion implantation with subsequent high temperature annealing at 1500 °C. We show transition linewidths down to 99 MHz and narrow inhomogeneous distributions. Furthermore, we achieved a reduction of homogeneous linewidths by a factor of 2 after removing subsurface damage using oxygen plasma processing. These results not only give insights into the formation process of SiV− centers but also indicate a favorable processing method to fabricate shallow single quantum emitters in diamond perfectly suited for coupling to nanostructures on the diamond surface.

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A novel analytical platform combining infrared attenuated total reflection (IR-ATR) spectroelectrochemistry (SE) with atomic force microscopy (AFM) using a boron-doped diamond (BDD)-modified ATR crystal is presented. The utility of this combination is demonstrated investigating the electrodeposition of a polymer film via IR spectroscopy, while the surface modification is simultaneously imaged by AFM. The ATR waveguide consists of a single-crystal intrinsic diamond overgrown with a homoepitaxial BDD layer (thickness: ∼100 nm, boron content: ∼5 × 10(20) cm(-3)) to provide electric conductivity. The diamond ATR crystal is shaped in the form of a hemisphere with a beveled top and an octahedronal surface area of approximately 400 μm(2). To demonstrate combined IR-ATR-SE-AFM measurements, the electro-polymerization of 3,4-ethylenedioxothiophene (EDOT) was selected as a model system. Depositions were obtained from aqueous solutions, while changes in IR signature, topography, and electrochemical behavior were recorded in situ and simultaneously during the polymerization process.

The electrical transport properties of two-dimensional (2D) borondoped delta layers were investigated by a comprehensive analysis of physical, electrochemical and microscopic methods. The boron concentration profile was determined physically by elastic recoil detection (ERD) and compared to the doping (acceptor) profile extracted from capacitance-voltage (CV) measurements, giving a boron concentration of 2-4 Â 10 13 cm À2 . Corresponding field effect transistor (FET) characteristics, based on the boron-doped delta channel concept, measured in electrolyte, show good modulation behaviour but field effect mobilities in the range of 10 À2 -10 À1 cm 2 V À1 s À1 that are far below expected values. High-resolution transmission electron microscopy (HR-TEM) analysis was employed to shed new light on the transport behaviour of boron-doped delta layers, revealing an inhomogeneous and interrupted morphology. Based on this finding, a hypothesis is proposed, modelling the delta layer transport behaviour via hopping and tunnelling processes between boron clusters.